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B20NM50FD-VB Product details
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Product Introduction
**B20NM50FD-VB** is a high voltage unipolar N-channel field effect transistor in TO263 package. Based on SJ_Multi-EPI technology, this MOSFET is designed to handle drain-source voltages up to 650V, with excellent switching performance and high current carrying capacity. It is suitable for applications requiring high voltage and high power handling, and provides stable switching characteristics and reliable performance.
**B20NM50FD-VB** is a high voltage unipolar N-channel field effect transistor in TO263 package. Based on SJ_Multi-EPI technology, this MOSFET is designed to handle drain-source voltages up to 650V, with excellent switching performance and high current carrying capacity. It is suitable for applications requiring high voltage and high power handling, and provides stable switching characteristics and reliable performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: B20NM50FD-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (V_DS)**: 650V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(on))**: 160mΩ (V_GS = 10V)
- **Maximum leakage current (I_D)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: B20NM50FD-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (V_DS)**: 650V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(on))**: 160mΩ (V_GS = 10V)
- **Maximum leakage current (I_D)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
1. **Power management**: The B20NM50FD-VB is suitable for high-voltage power management systems, including high-voltage DC-DC converters and power adapters. Its high voltage withstand capability and low on-resistance enable it to efficiently handle high power currents, improving the efficiency and reliability of power systems.
2. **Inverter**: In solar inverters and other high-voltage inverter systems, this MOSFET is able to provide stable switching performance and handle high-voltage loads of 650V, helping to achieve efficient energy conversion and management.
3. **Industrial equipment**: For high-voltage switches and motor drive systems in industrial automation equipment, the B20NM50FD-VB is able to handle high current and high voltage loads, ensuring stable operation of the equipment in high-voltage environments.
4. **High-voltage switch**: Suitable for high-voltage switching applications, such as power protection and high-power switching devices. Its high current carrying capacity and stable switching performance enable it to perform well in high-voltage environments.
1. **Power management**: The B20NM50FD-VB is suitable for high-voltage power management systems, including high-voltage DC-DC converters and power adapters. Its high voltage withstand capability and low on-resistance enable it to efficiently handle high power currents, improving the efficiency and reliability of power systems.
2. **Inverter**: In solar inverters and other high-voltage inverter systems, this MOSFET is able to provide stable switching performance and handle high-voltage loads of 650V, helping to achieve efficient energy conversion and management.
3. **Industrial equipment**: For high-voltage switches and motor drive systems in industrial automation equipment, the B20NM50FD-VB is able to handle high current and high voltage loads, ensuring stable operation of the equipment in high-voltage environments.
4. **High-voltage switch**: Suitable for high-voltage switching applications, such as power protection and high-power switching devices. Its high current carrying capacity and stable switching performance enable it to perform well in high-voltage environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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