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B20NK50Z-VB Product details
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**Product Introduction**
The B20NK50Z-VB is a high voltage, high performance single N-channel field effect transistor (MOSFET) in a TO-263 package and SJ_Multi-EPI technology. Designed for high voltage applications, this device is capable of handling drain-source voltages up to 650V while having a maximum drain current of 20A. Its low on-resistance and high withstand voltage performance enable it to excel in high power and high voltage conditions.
The B20NK50Z-VB is a high voltage, high performance single N-channel field effect transistor (MOSFET) in a TO-263 package and SJ_Multi-EPI technology. Designed for high voltage applications, this device is capable of handling drain-source voltages up to 650V while having a maximum drain current of 20A. Its low on-resistance and high withstand voltage performance enable it to excel in high power and high voltage conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
**Detailed parameter description**
- **Model**: B20NK50Z-VB
- **Package**: TO-263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (V_DS)**: 650V
- **Maximum gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 160mΩ@V_GS=10V
- **Maximum leakage current (I_D)**: 20A
- **Technology**: SJ_Multi-EPI process
Domain and module applications：
Applications and modules:
1. **High-voltage power converters**: The B20NK50Z-VB is suitable for high-voltage DC-DC converters and AC-DC power supply systems. It can effectively handle high voltage and high-power loads, improving the efficiency and stability of the system.
2. **Power inverter**: In power inverter applications, this MOSFET can handle high voltages of 650V, suitable for solar inverters and wind inverters, improving conversion efficiency and reliability.
3. **Industrial power management**: Power management systems used in industrial equipment provide high voltage tolerance and stable switching performance, especially suitable for occasions requiring high voltage handling.
4. **Electric vehicle charging system**: In the charging system of electric vehicles, this MOSFET can handle high voltage inputs to ensure the safety and efficiency of the charging process.
1. **High-voltage power converters**: The B20NK50Z-VB is suitable for high-voltage DC-DC converters and AC-DC power supply systems. It can effectively handle high voltage and high-power loads, improving the efficiency and stability of the system.
2. **Power inverter**: In power inverter applications, this MOSFET can handle high voltages of 650V, suitable for solar inverters and wind inverters, improving conversion efficiency and reliability.
3. **Industrial power management**: Power management systems used in industrial equipment provide high voltage tolerance and stable switching performance, especially suitable for occasions requiring high voltage handling.
4. **Electric vehicle charging system**: In the charging system of electric vehicles, this MOSFET can handle high voltage inputs to ensure the safety and efficiency of the charging process.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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