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B16PF06L-VB Product details
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**Product Introduction: **
B16PF06L-VB is a high-performance N-channel MOSFET in TO263 package, designed for medium and high voltage and current applications. This MOSFET provides a drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 50A. When VGS is 4.5V and 10V, its on-resistance (RDS(on)) is 35mΩ and 32mΩ respectively. Using Trench technology, B16PF06L-VB has low on-resistance and good switching characteristics, suitable for high-performance and low-power electronic devices.
B16PF06L-VB is a high-performance N-channel MOSFET in TO263 package, designed for medium and high voltage and current applications. This MOSFET provides a drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 50A. When VGS is 4.5V and 10V, its on-resistance (RDS(on)) is 35mΩ and 32mΩ respectively. Using Trench technology, B16PF06L-VB has low on-resistance and good switching characteristics, suitable for high-performance and low-power electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | 35(mΩ) | 32(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
**Detailed parameter description: **
- **Model**: B16PF06L-VB
- **Package**: TO263
- **Configuration**: Single tube N channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(on))**:
- 35mΩ (at VGS=4.5V)
- 32mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench
Domain and module applications：
Applications and module examples:
1. Power Management Systems: Due to its low on-resistance, the B16PF06L-VB is suitable for power management systems, helping to improve system efficiency and reduce power losses.
2. Electric Vehicles: In electric vehicles, this MOSFET is suitable for battery management and electric control modules, providing stable current handling capabilities and high efficiency.
3. Industrial Motor Drives: Suitable for industrial motor drive systems, it can handle high currents and provide reliable switching control, improving the overall performance of the system.
4. Efficient Switching Power Supplies: The B16PF06L-VB excels in high-efficiency switching power supplies, where low on-resistance helps improve conversion efficiency and reduce heat generation.
1. Power Management Systems: Due to its low on-resistance, the B16PF06L-VB is suitable for power management systems, helping to improve system efficiency and reduce power losses.
2. Electric Vehicles: In electric vehicles, this MOSFET is suitable for battery management and electric control modules, providing stable current handling capabilities and high efficiency.
3. Industrial Motor Drives: Suitable for industrial motor drive systems, it can handle high currents and provide reliable switching control, improving the overall performance of the system.
4. Efficient Switching Power Supplies: The B16PF06L-VB excels in high-efficiency switching power supplies, where low on-resistance helps improve conversion efficiency and reduce heat generation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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