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B15S65-VB Product details
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Product Introduction
**B15S65-VB** is a unipolar N-channel MOSFET in TO263 package. It adopts SJ_Multi-EPI technology, with high withstand voltage and moderate on-resistance. This MOSFET is particularly suitable for high voltage applications such as power conversion and switching power supplies, and can provide reliable performance and stability in high voltage environments.
**B15S65-VB** is a unipolar N-channel MOSFET in TO263 package. It adopts SJ_Multi-EPI technology, with high withstand voltage and moderate on-resistance. This MOSFET is particularly suitable for high voltage applications such as power conversion and switching power supplies, and can provide reliable performance and stability in high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 15A | 300(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Parameter description
- **Model**: B15S65-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 300mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 15A
- **Technology**: SJ_Multi-EPI
- **Model**: B15S65-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 300mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 15A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
**B15S65-VB** MOSFET performs well in the following fields and modules:
1. **High-voltage switching power supply**: Its high voltage withstand capability makes it suitable for use in high-voltage switching power supplies, capable of handling high-voltage loads and providing stable and reliable switching performance.
2. **Inverter**: Suitable for inverter applications, it can work stably under high voltage conditions to ensure the efficiency and reliability of power conversion.
3. **Industrial power management**: In industrial power management systems, B15S65-VB can be used for high-voltage load switching and power regulation to improve the overall performance and stability of the system.
4. **Solar inverter**: In solar inverters, this MOSFET can withstand high voltages and provide high efficiency, suitable for power conversion and management in solar power generation systems.
5. **High-voltage motor drive**: Suitable for use in high-voltage motor drive systems, it can provide stable switching operations and ensure efficient operation of the motor.
**B15S65-VB** MOSFET performs well in the following fields and modules:
1. **High-voltage switching power supply**: Its high voltage withstand capability makes it suitable for use in high-voltage switching power supplies, capable of handling high-voltage loads and providing stable and reliable switching performance.
2. **Inverter**: Suitable for inverter applications, it can work stably under high voltage conditions to ensure the efficiency and reliability of power conversion.
3. **Industrial power management**: In industrial power management systems, B15S65-VB can be used for high-voltage load switching and power regulation to improve the overall performance and stability of the system.
4. **Solar inverter**: In solar inverters, this MOSFET can withstand high voltages and provide high efficiency, suitable for power conversion and management in solar power generation systems.
5. **High-voltage motor drive**: Suitable for use in high-voltage motor drive systems, it can provide stable switching operations and ensure efficient operation of the motor.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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