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B15S60-VB Product details
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**Product Introduction**
B15S60-VB is a high voltage, high withstand voltage single N-channel field effect transistor (MOSFET) packaged in TO-263 and using SJ_Multi-EPI technology. The device is designed to operate stably under high voltage conditions and is suitable for power conversion and load drive applications. With a high drain-source voltage of 650V and a maximum drain current of 15A, it provides reliable switching performance and low on-resistance.
B15S60-VB is a high voltage, high withstand voltage single N-channel field effect transistor (MOSFET) packaged in TO-263 and using SJ_Multi-EPI technology. The device is designed to operate stably under high voltage conditions and is suitable for power conversion and load drive applications. With a high drain-source voltage of 650V and a maximum drain current of 15A, it provides reliable switching performance and low on-resistance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 15A | 300(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
**Detailed parameter description**
- **Model**: B15S60-VB
- **Package**: TO-263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (V_DS)**: 650V
- **Maximum gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 300mΩ@V_GS=10V
- **Maximum leakage current (I_D)**: 15A
- **Technology**: SJ_Multi-EPI process
- **Model**: B15S60-VB
- **Package**: TO-263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (V_DS)**: 650V
- **Maximum gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 300mΩ@V_GS=10V
- **Maximum leakage current (I_D)**: 15A
- **Technology**: SJ_Multi-EPI process
Domain and module applications：
Applications and modules
1. **High-voltage power conversion**: The B15S60-VB is suitable for high-voltage DC-DC converters and AC-DC power supply systems, and can handle high voltage and high power applications, improving system reliability and stability.
2. **Electric vehicle charging system**: In the charging system of electric vehicles, this MOSFET can handle high-voltage power to ensure the efficiency and safety of the charging process.
3. **Industrial power management**: Suitable for power management systems for industrial equipment, providing high voltage resistance and high stability, especially in situations where high voltage tolerance is required.
4. **Solar inverter**: In solar inverters, this MOSFET can be used to handle high voltage input, helping to improve conversion efficiency and system reliability.
1. **High-voltage power conversion**: The B15S60-VB is suitable for high-voltage DC-DC converters and AC-DC power supply systems, and can handle high voltage and high power applications, improving system reliability and stability.
2. **Electric vehicle charging system**: In the charging system of electric vehicles, this MOSFET can handle high-voltage power to ensure the efficiency and safety of the charging process.
3. **Industrial power management**: Suitable for power management systems for industrial equipment, providing high voltage resistance and high stability, especially in situations where high voltage tolerance is required.
4. **Solar inverter**: In solar inverters, this MOSFET can be used to handle high voltage input, helping to improve conversion efficiency and system reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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