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B150NF55-VB Product details
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Product Introduction
**Model**: B150NF55-VB
**Package**: TO263
**Configuration**: Unipolar N-channel MOSFET
**Withstand voltage**: 60V
**Gate-source voltage**: ±20V
**Threshold voltage**: 3V
**On-resistance**: 4mΩ @ V_GS = 10V
**Maximum drain current**: 150A
**Technology**: Trench type
**Model**: B150NF55-VB
**Package**: TO263
**Configuration**: Unipolar N-channel MOSFET
**Withstand voltage**: 60V
**Gate-source voltage**: ±20V
**Threshold voltage**: 3V
**On-resistance**: 4mΩ @ V_GS = 10V
**Maximum drain current**: 150A
**Technology**: Trench type
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: B150NF55-VB
- **Package type**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source withstand voltage (V_DS)**: 60V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**: 4mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: 150A
- **Technology type**: Trench technology
- **Model**: B150NF55-VB
- **Package type**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source withstand voltage (V_DS)**: 60V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**: 4mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: 150A
- **Technology type**: Trench technology
Domain and module applications：
Application fields and module examples
1. **High-power switching power supply**
The high withstand voltage and low on-resistance characteristics of B150NF55-VB make it suitable for high-power switching power supply, which can effectively handle high current and reduce energy loss, and improve power conversion efficiency.
2. **Electric vehicle power module**
Due to its high current capability and stable performance, this MOSFET is suitable for the power module of electric vehicles, which can provide reliable current control and thermal management to ensure the power system of electric vehicles.
3. **High-power LED drive**
In high-power LED drive systems, B150NF55-VB can be used to control high-current loads, ensuring high efficiency and long-term stable operation of LEDs, while reducing power consumption and heat generation.
4. **Motor drive system**
The high current capability and low on-resistance of this MOSFET make it suitable for motor drive systems, which can provide strong switching performance and motor control accuracy, and is suitable for high-power motor applications.
1. **High-power switching power supply**
The high withstand voltage and low on-resistance characteristics of B150NF55-VB make it suitable for high-power switching power supply, which can effectively handle high current and reduce energy loss, and improve power conversion efficiency.
2. **Electric vehicle power module**
Due to its high current capability and stable performance, this MOSFET is suitable for the power module of electric vehicles, which can provide reliable current control and thermal management to ensure the power system of electric vehicles.
3. **High-power LED drive**
In high-power LED drive systems, B150NF55-VB can be used to control high-current loads, ensuring high efficiency and long-term stable operation of LEDs, while reducing power consumption and heat generation.
4. **Motor drive system**
The high current capability and low on-resistance of this MOSFET make it suitable for motor drive systems, which can provide strong switching performance and motor control accuracy, and is suitable for high-power motor applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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