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B140NF55-VB TO263 Product details
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Product Introduction
**B140NF55-VB** is a high-performance single N-channel MOSFET in TO263 package. This MOSFET adopts Trench technology and is designed for high current and high voltage applications. It has low on-resistance and high voltage resistance, suitable for a variety of high-efficiency power management and power conversion applications.
**B140NF55-VB** is a high-performance single N-channel MOSFET in TO263 package. This MOSFET adopts Trench technology and is designed for high current and high voltage applications. It has low on-resistance and high voltage resistance, suitable for a variety of high-efficiency power management and power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: B140NF55-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (V_DS)**: 60V
- **Gate-source voltage (V_GS)**: ±20V
- **Gate-source threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**:
- At 10V gate-source voltage: 4mΩ
- **Maximum leakage current (I_D)**: 150A
- **Technology**: Trench
- **Model**: B140NF55-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (V_DS)**: 60V
- **Gate-source voltage (V_GS)**: ±20V
- **Gate-source threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**:
- At 10V gate-source voltage: 4mΩ
- **Maximum leakage current (I_D)**: 150A
- **Technology**: Trench
Domain and module applications：
Application fields and modules
**B140NF55-VB** is suitable for the following fields and modules:
1. **High-power switching power supply**:
- As a high-efficiency switching element for power conversion and regulation, it provides low on-resistance to improve system efficiency.
2. **Electric Vehicle (EV)**:
- In the battery management and motor drive system of electric vehicles, it supports high current operation and stability.
3. **Data Center Power**:
- Applied in power modules in data centers to achieve efficient current control and low power consumption.
4. **Industrial Equipment**:
- In the power management system of various industrial equipment, it is used for high current switching to ensure efficient and reliable operation.
These application scenarios show the significant advantages of B140NF55-VB in electronic modules that handle high current and high voltage requirements.
**B140NF55-VB** is suitable for the following fields and modules:
1. **High-power switching power supply**:
- As a high-efficiency switching element for power conversion and regulation, it provides low on-resistance to improve system efficiency.
2. **Electric Vehicle (EV)**:
- In the battery management and motor drive system of electric vehicles, it supports high current operation and stability.
3. **Data Center Power**:
- Applied in power modules in data centers to achieve efficient current control and low power consumption.
4. **Industrial Equipment**:
- In the power management system of various industrial equipment, it is used for high current switching to ensure efficient and reliable operation.
These application scenarios show the significant advantages of B140NF55-VB in electronic modules that handle high current and high voltage requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
