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B130NH02L-VB Product details
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**Product Introduction**
B130NH02L-VB is a high current, high performance single N-channel field effect transistor (MOSFET) in TO-263 package using Trench process. It is designed to provide low on-resistance and high current handling capability, suitable for efficient power management and load driving applications. The device has excellent switching performance, can operate stably within a voltage range of 30V, and is suitable for use under high current conditions.
B130NH02L-VB is a high current, high performance single N-channel field effect transistor (MOSFET) in TO-263 package using Trench process. It is designed to provide low on-resistance and high current handling capability, suitable for efficient power management and load driving applications. The device has excellent switching performance, can operate stably within a voltage range of 30V, and is suitable for use under high current conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.7(mΩ) | 2.4(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
**Detailed parameter description**
- **Model**: B130NH02L-VB
- **Package**: TO-263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (V_DS)**: 30V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- At 4.5V: 2.7mΩ
- At 10V: 2.4mΩ
- **Maximum leakage current (I_D)**: 98A
- **Technology**: Trench process
Domain and module applications：
**Application areas and modules**
1. **Power management systems**: In high-efficiency DC-DC converters and power supply modules, the B130NH02L-VB is suitable for optimizing power efficiency and reducing power losses due to its low on-resistance and high current handling capability.
2. **Electric vehicles**: In battery management systems and motor drives for electric vehicles, this MOSFET can handle high current loads, ensuring efficient operation and reliability of the system.
3. **Industrial drives**: In motor drive systems for industrial equipment, it can stably control high current motors and improve the overall performance and energy efficiency of the system.
4. **Communication infrastructure**: In power modules for communication equipment, the B130NH02L-VB can improve system stability and reliability as a switching element, especially for high-frequency and high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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