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B120NF10-VB Product details
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**Product Introduction:**
B120NF10-VB is a high-performance N-channel MOSFET in TO263 package, suitable for high voltage and high current applications. This MOSFET provides a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 100A. When VGS is 4.5V and 10V, its on-resistance (RDS(on)) is 23mΩ and 10mΩ respectively. Using Trench technology, this MOSFET has extremely low on-resistance and excellent switching performance, which is very suitable for high power density and high efficiency electronic circuit design.
B120NF10-VB is a high-performance N-channel MOSFET in TO263 package, suitable for high voltage and high current applications. This MOSFET provides a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 100A. When VGS is 4.5V and 10V, its on-resistance (RDS(on)) is 23mΩ and 10mΩ respectively. Using Trench technology, this MOSFET has extremely low on-resistance and excellent switching performance, which is very suitable for high power density and high efficiency electronic circuit design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 23(mΩ) | 10(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
**Detailed parameter description: **
- **Model**: B120NF10-VB
- **Package**: TO263
- **Configuration**: Single tube N channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(on))**:
- 23mΩ (at VGS=4.5V)
- 10mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
- **Model**: B120NF10-VB
- **Package**: TO263
- **Configuration**: Single tube N channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(on))**:
- 23mΩ (at VGS=4.5V)
- 10mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Applications and module examples:
1. High-Power Power Management: With its ultra-low on-resistance and high current capability, the B120NF10-VB is suitable for high-power power management systems, which can significantly improve energy efficiency and reduce heat.
2. Electric Vehicles: In the battery management system and power control module of electric vehicles, this MOSFET provides high current carrying capability and low power consumption, ensuring system stability and efficiency.
3. Industrial Equipment: Suitable for high-power switching and current control applications in industrial equipment, it can provide reliable performance in harsh working environments.
4. Efficient Switching Power Supply: In efficient switching power supplies, the low RDS(on) and high current capability of this MOSFET help improve the system's conversion efficiency and reduce power losses.
1. High-Power Power Management: With its ultra-low on-resistance and high current capability, the B120NF10-VB is suitable for high-power power management systems, which can significantly improve energy efficiency and reduce heat.
2. Electric Vehicles: In the battery management system and power control module of electric vehicles, this MOSFET provides high current carrying capability and low power consumption, ensuring system stability and efficiency.
3. Industrial Equipment: Suitable for high-power switching and current control applications in industrial equipment, it can provide reliable performance in harsh working environments.
4. Efficient Switching Power Supply: In efficient switching power supplies, the low RDS(on) and high current capability of this MOSFET help improve the system's conversion efficiency and reduce power losses.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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