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B11NM80-VB Product details
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Product Introduction
B11NM80-VB is a high voltage single-channel N-channel MOSFET in TO263 package. This MOSFET is designed to withstand drain-source voltages up to 800V and supports a maximum drain current of 15A. It uses SJ_Multi-EPI technology and has a high on-resistance, making it suitable for high voltage and high power applications.
B11NM80-VB is a high voltage single-channel N-channel MOSFET in TO263 package. This MOSFET is designed to withstand drain-source voltages up to 800V and supports a maximum drain current of 15A. It uses SJ_Multi-EPI technology and has a high on-resistance, making it suitable for high voltage and high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 15A | 380(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: B11NM80-VB
- **Package**: TO263
- **Configuration**: Single channel N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 15A
- **Technology**: SJ_Multi-EPI process
- **Model**: B11NM80-VB
- **Package**: TO263
- **Configuration**: Single channel N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 15A
- **Technology**: SJ_Multi-EPI process
Domain and module applications：
Applicable fields and modules
B11NM80-VB is suitable for the following fields:
1. **Power conversion**: In high voltage switching power supplies and converters, it is used for efficient power conversion and current regulation.
2. **Power electronics**: Suitable for high power power equipment such as power inverters and power amplifiers due to their high voltage tolerance and stability.
3. **Industrial applications**: Provide reliable power switching functions in high voltage industrial equipment such as motor drives and automation control systems.
4. **Home appliances and lighting**: Used for power control of high voltage home appliances and lighting equipment to ensure stable operation and safety of the system.
B11NM80-VB is suitable for the following fields:
1. **Power conversion**: In high voltage switching power supplies and converters, it is used for efficient power conversion and current regulation.
2. **Power electronics**: Suitable for high power power equipment such as power inverters and power amplifiers due to their high voltage tolerance and stability.
3. **Industrial applications**: Provide reliable power switching functions in high voltage industrial equipment such as motor drives and automation control systems.
4. **Home appliances and lighting**: Used for power control of high voltage home appliances and lighting equipment to ensure stable operation and safety of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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