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AULR3636-VB Product details
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Product Introduction
**Model**: AULR3636-VB
**Package**: TO252
**Configuration**: Unipolar N-channel MOSFET
**Withstand voltage**: 60V
**Gate-source voltage**: ±20V
**Threshold voltage**: 3V
**On-resistance**:
- 12mΩ @ V_GS = 4.5V
- 4.5mΩ @ V_GS = 10V
**Maximum leakage current**: 97A
**Technology**: Trench type
**Model**: AULR3636-VB
**Package**: TO252
**Configuration**: Unipolar N-channel MOSFET
**Withstand voltage**: 60V
**Gate-source voltage**: ±20V
**Threshold voltage**: 3V
**On-resistance**:
- 12mΩ @ V_GS = 4.5V
- 4.5mΩ @ V_GS = 10V
**Maximum leakage current**: 97A
**Technology**: Trench type
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | 12(mΩ) | 4.5(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: AULR3636-VB
- **Package type**: TO252
- **Configuration**: Single N-channel MOSFET
- **Drain-source withstand voltage (V_DS)**: 60V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**:
- 12mΩ @ V_GS = 4.5V
- 4.5mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: 97A
- **Technology type**: Trench technology
- **Model**: AULR3636-VB
- **Package type**: TO252
- **Configuration**: Single N-channel MOSFET
- **Drain-source withstand voltage (V_DS)**: 60V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**:
- 12mΩ @ V_GS = 4.5V
- 4.5mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: 97A
- **Technology type**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power management module**
The low on-resistance and high leakage current capability of AULR3636-VB make it very suitable for efficient power management systems, especially in scenarios where high current and low power loss are required.
2. **Electric vehicle control system**
The high withstand voltage and low R_DS(ON) characteristics of this MOSFET make it suitable for use in power conversion and motor drive modules of electric vehicles to provide stable and reliable power control.
3. **Switching power supply**
In the design of switching power supply, AULR3636-VB can be used to improve conversion efficiency and reduce heat due to its low on-resistance and high current carrying capacity.
4. **LED drive circuit**
Due to its high current capability and low on-resistance, it is suitable for switching elements in LED drive circuits, which can effectively reduce energy loss and improve the working efficiency of LEDs.
1. **Power management module**
The low on-resistance and high leakage current capability of AULR3636-VB make it very suitable for efficient power management systems, especially in scenarios where high current and low power loss are required.
2. **Electric vehicle control system**
The high withstand voltage and low R_DS(ON) characteristics of this MOSFET make it suitable for use in power conversion and motor drive modules of electric vehicles to provide stable and reliable power control.
3. **Switching power supply**
In the design of switching power supply, AULR3636-VB can be used to improve conversion efficiency and reduce heat due to its low on-resistance and high current carrying capacity.
4. **LED drive circuit**
Due to its high current capability and low on-resistance, it is suitable for switching elements in LED drive circuits, which can effectively reduce energy loss and improve the working efficiency of LEDs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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