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AULR3410-VB Product details
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**Product Introduction:**
AULR3410-VB is a single-tube N-channel MOSFET in TO252 package, suitable for high voltage switching applications. This MOSFET has a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 15A. When VGS is 10V, its RDS(on) is 114mΩ. This MOSFET uses advanced Trench technology to provide low on-resistance and high switching speed, suitable for circuit designs requiring high efficiency and low power consumption.
AULR3410-VB is a single-tube N-channel MOSFET in TO252 package, suitable for high voltage switching applications. This MOSFET has a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 15A. When VGS is 10V, its RDS(on) is 114mΩ. This MOSFET uses advanced Trench technology to provide low on-resistance and high switching speed, suitable for circuit designs requiring high efficiency and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
**Detailed parameter description: **
- **Model**: AULR3410-VB
- **Package**: TO252
- **Configuration**: Single tube N channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(on))**: 114mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 15A
- **Technology**: Trench
- **Model**: AULR3410-VB
- **Package**: TO252
- **Configuration**: Single tube N channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(on))**: 114mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 15A
- **Technology**: Trench
Domain and module applications：
Applications and module examples:
1. Switching Power Supply: Due to its low RDS(on) and high current capability, AULR3410-VB is suitable for efficient switching control in switching power supplies, which can significantly reduce power consumption and heat.
2. Motor Drive: Suitable for use in motor drive systems, providing stable current control and high switching speed, enhancing system performance and efficiency.
3. DC-DC Converter: In DC-DC converters, the low on-resistance of AULR3410-VB helps improve conversion efficiency and reduce power loss.
4. Automotive Electronics: In automotive electronics applications, the high withstand voltage characteristics and stability of this MOSFET make it suitable for automotive battery management and electric control systems.
1. Switching Power Supply: Due to its low RDS(on) and high current capability, AULR3410-VB is suitable for efficient switching control in switching power supplies, which can significantly reduce power consumption and heat.
2. Motor Drive: Suitable for use in motor drive systems, providing stable current control and high switching speed, enhancing system performance and efficiency.
3. DC-DC Converter: In DC-DC converters, the low on-resistance of AULR3410-VB helps improve conversion efficiency and reduce power loss.
4. Automotive Electronics: In automotive electronics applications, the high withstand voltage characteristics and stability of this MOSFET make it suitable for automotive battery management and electric control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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