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AUIRLR3915-VB Product details

Product introduction:

AUIRLR3915-VB Product Introduction

AUIRLR3915-VB is a high-performance single N-channel power MOSFET in TO252 package, designed for high power and high efficiency applications. This MOSFET adopts Trench technology to provide excellent switching performance and low on-resistance. Its drain-source voltage (VDS) is up to 60V and the gate-source voltage (VGS) is up to ±20V. At VGS of 10V, the on-resistance is 10 milliohms and it can handle a maximum drain current of 58A. The low on-resistance and high current handling capability of AUIRLR3915-VB make it excel in a variety of high power and high efficiency electronic applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 60V 2.5V 58A 13(mΩ) 10(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 60V 2.5V 58A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 60V 2.5V 58A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
AUIRLR3915-VB Detailed Parameter Description

| Parameter| Value| Remarks|
|------------|------------|-----------------------|
| Package Type| TO252 | Standard Package|
| Configuration| Single N-Channel| Single N-Channel MOSFET|
| VDS | 60V | Drain-Source Voltage|
| VGS | ±20V | Gate-Source Voltage|
| Vth | 2.5V | Gate Threshold Voltage|
| RDS(ON) | 13mΩ@VGS=4.5V | On-Resistance|
| RDS(ON) | 10mΩ@VGS=10V | On-Resistance|
| ID | 58A | Continuous Drain Current|
| Technology| Trench | Trench MOSFET Technology|

Domain and module applications:

Application fields and module examples

The characteristics of AUIRLR3915-VB make it widely used in many fields and modules:

1. **Power management system**:
- **Switching power supply**: In the switching power supply (SMPS), AUIRLR3915-VB is used as a switching tube. Its low on-resistance and high current handling capability can reduce switching losses and improve power conversion efficiency, which is suitable for high-power power applications.
- **DC-DC converter**: In the DC-DC converter, the low on-resistance of MOSFET can reduce power consumption and improve the overall efficiency of the system, which is suitable for high-efficiency power solutions.

2. **Automotive electronics**:
- **Electric vehicle drive system**: In the motor control system of electric vehicles, AUIRLR3915-VB can drive high current loads. Its high current carrying capacity and low on-resistance ensure the efficiency and stability of the system.
- **Automotive Battery Management System**: This MOSFET can effectively control current in battery management systems, improve system efficiency and reliability, especially in high-power applications.

3. **Industrial Automation**:
- **Motor Drive**: In industrial motor drive systems, the high current handling capability and low on-resistance of AUIRLR3915-VB enable it to stably drive high-power motors, suitable for the control of high-power loads, and ensure reliable operation of the system.
- **High-power Switch**: When used in high-power switch control applications, this MOSFET can provide reliable switching performance and is suitable for various industrial control needs.

4. **Consumer Electronics**:
- **High-efficiency Power Module**: In power modules for computers and consumer electronic devices, AUIRLR3915-VB can handle high currents, provide stable power supply, and improve the overall efficiency of the system.
- **Audio Equipment**: In audio power amplifiers, the low on-resistance and high current capability of MOSFET can handle high-power audio signals and provide high-quality audio output.

AUIRLR3915-VB is a key component in various high-power electronic devices due to its excellent electrical performance and wide application applicability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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