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AUIRLR3114ZTR-VB Product details
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AUIRLR3114ZTR-VB Product Introduction
AUIRLR3114ZTR-VB is a high-performance single N-channel power MOSFET with a TO252 package type. This MOSFET is manufactured using advanced trench technology and has extremely low on-resistance and high current handling capability, making it particularly suitable for applications requiring high efficiency and high power. Its drain-source voltage is 40V and its drain current capability reaches 120A, enabling it to operate stably under various high-load conditions. The low on-resistance of the AUIRLR3114ZTR-VB enables it to provide excellent performance in power management, motor control, and automotive electronics.
AUIRLR3114ZTR-VB is a high-performance single N-channel power MOSFET with a TO252 package type. This MOSFET is manufactured using advanced trench technology and has extremely low on-resistance and high current handling capability, making it particularly suitable for applications requiring high efficiency and high power. Its drain-source voltage is 40V and its drain current capability reaches 120A, enabling it to operate stably under various high-load conditions. The low on-resistance of the AUIRLR3114ZTR-VB enables it to provide excellent performance in power management, motor control, and automotive electronics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | 3(mΩ) | 1.6(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 1.6mΩ @ VGS = 10V
- **Drain current (ID)**: 120A
- **Technology type**: Trench technology
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 1.6mΩ @ VGS = 10V
- **Drain current (ID)**: 120A
- **Technology type**: Trench technology
Domain and module applications：
Applicable fields and modules
1. **Power management**:
- **High-efficiency DC-DC converter**: AUIRLR3114ZTR-VB is suitable for high-efficiency DC-DC converters. Its extremely low on-resistance and high current handling capability enable it to significantly improve conversion efficiency and reduce energy loss in power switches.
- **Power switch**: In the power switch module, this MOSFET can handle high loads and provide stable current control, suitable for power systems requiring high power and high efficiency.
2. **Motor control**:
- **High-power DC motor drive**: AUIRLR3114ZTR-VB can support high-power DC motor drive applications. Its high current carrying capacity and low on-resistance ensure stable and efficient operation of the motor under high load.
- **High-power stepper motor drive**: In high-power stepper motor drive systems, this MOSFET provides reliable current control and efficient power handling, suitable for precise and efficient motor drive needs.
3. **Automotive electronics**:
- **Battery management system (BMS)**: In automotive battery management systems, AUIRLR3114ZTR-VB can effectively manage the charging and discharging process of the battery, ensuring the stability of battery performance and the safety of the system.
- **Automotive power switch module**: This MOSFET is used in the power switch module in the car to control the power supply of various on-board devices and optimize the overall efficiency and reliability of the power system.
The high performance characteristics of AUIRLR3114ZTR-VB make it excellent in high-power applications, especially suitable for power and control systems that require high current and low conduction loss.
1. **Power management**:
- **High-efficiency DC-DC converter**: AUIRLR3114ZTR-VB is suitable for high-efficiency DC-DC converters. Its extremely low on-resistance and high current handling capability enable it to significantly improve conversion efficiency and reduce energy loss in power switches.
- **Power switch**: In the power switch module, this MOSFET can handle high loads and provide stable current control, suitable for power systems requiring high power and high efficiency.
2. **Motor control**:
- **High-power DC motor drive**: AUIRLR3114ZTR-VB can support high-power DC motor drive applications. Its high current carrying capacity and low on-resistance ensure stable and efficient operation of the motor under high load.
- **High-power stepper motor drive**: In high-power stepper motor drive systems, this MOSFET provides reliable current control and efficient power handling, suitable for precise and efficient motor drive needs.
3. **Automotive electronics**:
- **Battery management system (BMS)**: In automotive battery management systems, AUIRLR3114ZTR-VB can effectively manage the charging and discharging process of the battery, ensuring the stability of battery performance and the safety of the system.
- **Automotive power switch module**: This MOSFET is used in the power switch module in the car to control the power supply of various on-board devices and optimize the overall efficiency and reliability of the power system.
The high performance characteristics of AUIRLR3114ZTR-VB make it excellent in high-power applications, especially suitable for power and control systems that require high current and low conduction loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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