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AUIRLR3114ZTRR-VB Product details
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Product Introduction
AUIRLR3114ZTRR-VB is a high-performance single N-channel MOSFET in TO-252 package. This MOSFET is based on advanced trench technology and is designed for high current and high efficiency applications. AUIRLR3114ZTRR-VB has extremely low on-resistance and high current carrying capacity, and can operate stably at a maximum drain-source voltage of 40V and a drain current of 120A. These characteristics enable it to excel in a variety of applications requiring high power and high efficiency, especially in power management and electric vehicle systems.
AUIRLR3114ZTRR-VB is a high-performance single N-channel MOSFET in TO-252 package. This MOSFET is based on advanced trench technology and is designed for high current and high efficiency applications. AUIRLR3114ZTRR-VB has extremely low on-resistance and high current carrying capacity, and can operate stably at a maximum drain-source voltage of 40V and a drain current of 120A. These characteristics enable it to excel in a variety of applications requiring high power and high efficiency, especially in power management and electric vehicle systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | 3(mΩ) | 1.6(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: AUIRLR3114ZTRR-VB
- **Package**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 1.6mΩ @ VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench
- **Model**: AUIRLR3114ZTRR-VB
- **Package**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 1.6mΩ @ VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
The application areas of AUIRLR3114ZTRR-VB MOSFET include:
1. **Power Management**: In high-power power management systems, such as switch mode power supplies (SMPS) and DC-DC converters, AUIRLR3114ZTRR-VB provides extremely low on-resistance and high current handling capability, which can improve system efficiency and reduce energy loss. This makes it very suitable for use in power modules that require high efficiency and high power conversion.
2. **Electric Vehicle**: This MOSFET performs well in electric vehicle applications, especially in battery management systems and motor drives. Its high current carrying capacity and low on-resistance help improve the performance and energy efficiency of electric vehicles, ensuring system reliability and stability.
3. **Industrial Control**: In the field of industrial control, AUIRLR3114ZTRR-VB is used to drive high-power motors and control high-power loads. Its strong current handling capability and stability provide reliable control under high load conditions, ensuring efficient and stable operation of industrial equipment.
4. **Consumer Electronics**: This MOSFET is also suitable for high-power consumer electronics, such as high-power LED drivers and high-performance audio amplifiers. Its excellent electrical performance enables these devices to maintain high efficiency and stable operation under high-power operating conditions.
Through these application scenarios, it can be seen that the AUIRLR3114ZTRR-VB MOSFET has a wide range of applicability in applications with high power and high efficiency requirements, and is an ideal choice for many high-demand systems.
The application areas of AUIRLR3114ZTRR-VB MOSFET include:
1. **Power Management**: In high-power power management systems, such as switch mode power supplies (SMPS) and DC-DC converters, AUIRLR3114ZTRR-VB provides extremely low on-resistance and high current handling capability, which can improve system efficiency and reduce energy loss. This makes it very suitable for use in power modules that require high efficiency and high power conversion.
2. **Electric Vehicle**: This MOSFET performs well in electric vehicle applications, especially in battery management systems and motor drives. Its high current carrying capacity and low on-resistance help improve the performance and energy efficiency of electric vehicles, ensuring system reliability and stability.
3. **Industrial Control**: In the field of industrial control, AUIRLR3114ZTRR-VB is used to drive high-power motors and control high-power loads. Its strong current handling capability and stability provide reliable control under high load conditions, ensuring efficient and stable operation of industrial equipment.
4. **Consumer Electronics**: This MOSFET is also suitable for high-power consumer electronics, such as high-power LED drivers and high-performance audio amplifiers. Its excellent electrical performance enables these devices to maintain high efficiency and stable operation under high-power operating conditions.
Through these application scenarios, it can be seen that the AUIRLR3114ZTRR-VB MOSFET has a wide range of applicability in applications with high power and high efficiency requirements, and is an ideal choice for many high-demand systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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