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AUIRLR2908-VB Product details

Product introduction:

AUIRLR2908-VB Product Introduction

AUIRLR2908-VB is a high-performance single N-channel power MOSFET in TO252 package, designed for high voltage and high current applications. Manufactured using Trench technology, this MOSFET has excellent switching performance and low on-resistance. Its maximum drain-source voltage (VDS) is 100V, and its maximum gate-source voltage (VGS) is ±20V. At VGS of 10V, its on-resistance is 30 milliohms and it can handle a maximum drain current of 40A. The high voltage resistance and high current handling capabilities of the AUIRLR2908-VB enable it to excel in a variety of high-power and high-voltage electronic applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 100V 1.8V 40A 35(mΩ) 30(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 100V 1.8V 40A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 100V 1.8V 40A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
AUIRLR2908-VB Detailed Parameter Description

| Parameter| Value| Remarks|
|------------|------------|-----------------------|
| Package Type| TO252 | Standard Package|
| Configuration| Single N-Channel| Single N-Channel MOSFET|
| VDS | 100V | Drain-Source Voltage|
| VGS | ±20V | Gate-Source Voltage|
| Vth | 1.8V | Gate Threshold Voltage|
| RDS(ON) | 35mΩ@VGS=4.5V | On-Resistance|
| RDS(ON) | 30mΩ@VGS=10V | On-Resistance|
| ID | 40A | Continuous Drain Current|
| Technology| Trench | Trench MOSFET Technology|

Domain and module applications:

Application fields and module examples

The high performance characteristics of AUIRLR2908-VB make it widely used in multiple fields and modules:

1. **Power management system**:
- **Switching power supply**: In the switching power supply (SMPS), AUIRLR2908-VB is used as a switching tube. Its low on-resistance and high voltage handling capability can effectively reduce switching losses and improve power conversion efficiency. It is suitable for power systems requiring high voltage and high power.
- **DC-DC converter**: In high-power DC-DC converters, MOSFET can handle high current and high voltage, reduce power consumption, and improve the overall efficiency of the system.

2. **Automotive electronics**:
- **Electric vehicle drive system**: In the motor control module of electric vehicles, AUIRLR2908-VB can drive high current and high voltage loads, providing efficient and stable electric vehicle drive solutions.
- **Automotive battery management system**: This MOSFET can effectively control high voltage and high current in the battery management system to improve the efficiency and safety of the system.

3. **Industrial Automation**:
- **High Voltage Motor Drive**: In industrial motor drive systems, AUIRLR2908-VB can stably drive high voltage and high current motors, suitable for high power load control, and ensure reliable operation of the system.
- **High Power Switch**: When used in high voltage switch control applications, MOSFET can provide reliable switching performance, suitable for various industrial control needs.

4. **Consumer Electronics**:
- **High Efficiency Power Module**: In power modules for computers and consumer electronic devices, AUIRLR2908-VB can handle high current and high voltage, provide stable power supply, and improve the overall efficiency and stability of the system.
- **Audio Equipment**: In audio power amplifiers, the low on-resistance and high current capability of MOSFET can handle high power audio signals and provide high quality audio output.

AUIRLR2908-VB is an important component in high power and high voltage electronic devices due to its high voltage tolerance and excellent current handling performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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