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AUIRFU3607-VB Product details
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Product Introduction
**AUIRFU3607-VB** is a high-performance single N-channel MOSFET in TO251 package. It has a maximum drain-source voltage (VDS) of 80V and a maximum gate-source voltage (VGS) of ±20V. The threshold voltage (Vth) is 3V, which ensures that the MOSFET can be turned on at a relatively low gate voltage. The on-resistance (RDS(ON)) of this MOSFET is 8.7mΩ at VGS=4.5V, which drops to 6.4mΩ at VGS=10V. Its maximum continuous drain current (ID) is 75A and it is manufactured using Trench technology, making it particularly suitable for high-efficiency, high-current applications.
**AUIRFU3607-VB** is a high-performance single N-channel MOSFET in TO251 package. It has a maximum drain-source voltage (VDS) of 80V and a maximum gate-source voltage (VGS) of ±20V. The threshold voltage (Vth) is 3V, which ensures that the MOSFET can be turned on at a relatively low gate voltage. The on-resistance (RDS(ON)) of this MOSFET is 8.7mΩ at VGS=4.5V, which drops to 6.4mΩ at VGS=10V. Its maximum continuous drain current (ID) is 75A and it is manufactured using Trench technology, making it particularly suitable for high-efficiency, high-current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | 8.7(mΩ) | 6.4(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Parameter description
- **Model**: AUIRFU3607-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON)）**:
- 8.7mΩ @ VGS=4.5V
- 6.4mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 75A
- **Technology**: Trench
- **Model**: AUIRFU3607-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON)）**:
- 8.7mΩ @ VGS=4.5V
- 6.4mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 75A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **High-power power switch**: The low on-resistance and high current capability of AUIRFU3607-VB make it very suitable for high-power power switch modules, effectively reducing power consumption and improving overall efficiency.
2. **Electric vehicle drive system**: In the motor control system of electric vehicles, this MOSFET can stably handle high current requirements, improving system reliability and performance.
3. **DC-DC converter**: In DC-DC converters, the low on-resistance of AUIRFU3607-VB helps improve conversion efficiency, suitable for high-efficiency power supply design and current-intensive applications.
4. **Inverter**: Suitable for photovoltaic inverters and other high-power inverter applications, it can handle high voltage and high current requirements, ensuring the stability and efficiency of the inverter.
5. **Battery management system**: In battery management systems, this MOSFET can efficiently control the current during charging and discharging, optimize battery performance and extend its service life.
1. **High-power power switch**: The low on-resistance and high current capability of AUIRFU3607-VB make it very suitable for high-power power switch modules, effectively reducing power consumption and improving overall efficiency.
2. **Electric vehicle drive system**: In the motor control system of electric vehicles, this MOSFET can stably handle high current requirements, improving system reliability and performance.
3. **DC-DC converter**: In DC-DC converters, the low on-resistance of AUIRFU3607-VB helps improve conversion efficiency, suitable for high-efficiency power supply design and current-intensive applications.
4. **Inverter**: Suitable for photovoltaic inverters and other high-power inverter applications, it can handle high voltage and high current requirements, ensuring the stability and efficiency of the inverter.
5. **Battery management system**: In battery management systems, this MOSFET can efficiently control the current during charging and discharging, optimize battery performance and extend its service life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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