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AUIRFR8403TRR-VB Product details
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Product Introduction
**AUIRFR8403TRR-VB** is a high-performance single N-channel MOSFET in TO252 package with excellent switching performance and ultra-low on-resistance. Its maximum drain-source voltage (VDS) is 40V and the gate-source voltage (VGS) range is ±20V. The threshold voltage (Vth) is 3V, ensuring that it can be turned on at a moderate gate voltage. The on-resistance (RDS(ON)) of this MOSFET is 3mΩ at VGS=4.5V, and drops to 1.6mΩ at VGS=10V, with extremely low conduction losses. The maximum continuous drain current (ID) is 120A, and it is manufactured using Trench technology, suitable for high-efficiency and high-current applications.
**AUIRFR8403TRR-VB** is a high-performance single N-channel MOSFET in TO252 package with excellent switching performance and ultra-low on-resistance. Its maximum drain-source voltage (VDS) is 40V and the gate-source voltage (VGS) range is ±20V. The threshold voltage (Vth) is 3V, ensuring that it can be turned on at a moderate gate voltage. The on-resistance (RDS(ON)) of this MOSFET is 3mΩ at VGS=4.5V, and drops to 1.6mΩ at VGS=10V, with extremely low conduction losses. The maximum continuous drain current (ID) is 120A, and it is manufactured using Trench technology, suitable for high-efficiency and high-current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | 3(mΩ) | 1.6(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter description
- **Model**: AUIRFR8403TRR-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON)）**:
- 3mΩ @ VGS=4.5V
- 1.6mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 120A
- **Technology**: Trench
- **Model**: AUIRFR8403TRR-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON)）**:
- 3mΩ @ VGS=4.5V
- 1.6mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 120A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **High-power power switch**: Due to its ultra-low on-resistance, the AUIRFR8403TRR-VB is ideal for use in high-power power switch modules, significantly reducing power consumption and heat generation, and improving system efficiency.
2. **Battery management system**: In a battery management system, this MOSFET can effectively control the flow of high currents during charging and discharging, optimizing battery performance and extending its life.
3. **DC-DC converter**: Used in high-efficiency DC-DC converters, the low on-resistance and high current handling capability of the AUIRFR8403TRR-VB can improve conversion efficiency and reduce energy losses.
4. **Electric drive system**: In the drive system of electric vehicles or power tools, this MOSFET can stably handle high current demands, improving the overall performance and reliability of the system.
5. **Inverter**: In inverter applications, AUIRFR8403TRR-VB can handle the inverter process with high current and high efficiency requirements, and is suitable for photovoltaic inverters and other high power inverter applications.
1. **High-power power switch**: Due to its ultra-low on-resistance, the AUIRFR8403TRR-VB is ideal for use in high-power power switch modules, significantly reducing power consumption and heat generation, and improving system efficiency.
2. **Battery management system**: In a battery management system, this MOSFET can effectively control the flow of high currents during charging and discharging, optimizing battery performance and extending its life.
3. **DC-DC converter**: Used in high-efficiency DC-DC converters, the low on-resistance and high current handling capability of the AUIRFR8403TRR-VB can improve conversion efficiency and reduce energy losses.
4. **Electric drive system**: In the drive system of electric vehicles or power tools, this MOSFET can stably handle high current demands, improving the overall performance and reliability of the system.
5. **Inverter**: In inverter applications, AUIRFR8403TRR-VB can handle the inverter process with high current and high efficiency requirements, and is suitable for photovoltaic inverters and other high power inverter applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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