中文
English
AUIRFR5305-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**AUIRFR5305-VB** is a high-performance single P-channel MOSFET in TO252 package. Its maximum drain-source voltage (VDS) is -60V, and the gate-source voltage (VGS) range is ±20V. The threshold voltage (Vth) is -1.7V, indicating that it can be turned on at a lower gate voltage. The MOSFET has an on-resistance (RDS(ON)) of 25mΩ at VGS=4.5V and an on-resistance of 20mΩ at VGS=10V. Its maximum continuous drain current (ID) is -50A and it is manufactured using Trench technology, making it suitable for applications requiring high switching efficiency and low power consumption.
**AUIRFR5305-VB** is a high-performance single P-channel MOSFET in TO252 package. Its maximum drain-source voltage (VDS) is -60V, and the gate-source voltage (VGS) range is ±20V. The threshold voltage (Vth) is -1.7V, indicating that it can be turned on at a lower gate voltage. The MOSFET has an on-resistance (RDS(ON)) of 25mΩ at VGS=4.5V and an on-resistance of 20mΩ at VGS=10V. Its maximum continuous drain current (ID) is -50A and it is manufactured using Trench technology, making it suitable for applications requiring high switching efficiency and low power consumption.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | 25(mΩ) | 20(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Parameter description
- **Model**: AUIRFR5305-VB
- **Package**: TO252
- **Configuration**: Single P channel
- **Maximum drain-source voltage (VDS)**: -60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 25mΩ @ VGS=4.5V
- 20mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: -50A
- **Technology**: Trench
- **Model**: AUIRFR5305-VB
- **Package**: TO252
- **Configuration**: Single P channel
- **Maximum drain-source voltage (VDS)**: -60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 25mΩ @ VGS=4.5V
- 20mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: -50A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Power supply reverse protection**: Due to its low threshold voltage and on-resistance, AUIRFR5305-VB is suitable for reverse protection circuits at the power input end, effectively preventing damage to the circuit when the power supply is connected incorrectly.
2. **Motor drive**: In motor drive applications, this MOSFET can efficiently control the reverse current of the motor, especially in motor control systems that require high current handling capabilities.
3. **Load switch**: Suitable for various load switching circuits, it can provide stable current control in load switching operations, especially in situations where high current loads need to be carried.
4. **DC-DC converter**: In the high-side switch of the DC-DC converter, AUIRFR5305-VB can effectively reduce switching losses and improve overall conversion efficiency, making it suitable for high-efficiency power supply design.
5. **Inverter**: In inverter design, the high current carrying capability and low on-resistance of this MOSFET make it an ideal choice to effectively handle the high current signals generated during the inverter process.
1. **Power supply reverse protection**: Due to its low threshold voltage and on-resistance, AUIRFR5305-VB is suitable for reverse protection circuits at the power input end, effectively preventing damage to the circuit when the power supply is connected incorrectly.
2. **Motor drive**: In motor drive applications, this MOSFET can efficiently control the reverse current of the motor, especially in motor control systems that require high current handling capabilities.
3. **Load switch**: Suitable for various load switching circuits, it can provide stable current control in load switching operations, especially in situations where high current loads need to be carried.
4. **DC-DC converter**: In the high-side switch of the DC-DC converter, AUIRFR5305-VB can effectively reduce switching losses and improve overall conversion efficiency, making it suitable for high-efficiency power supply design.
5. **Inverter**: In inverter design, the high current carrying capability and low on-resistance of this MOSFET make it an ideal choice to effectively handle the high current signals generated during the inverter process.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
