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AUIRFR4104TRR-VB Product details
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Product Introduction
**AUIRFR4104TRR-VB** is a high-performance single N-channel MOSFET in TO252 package with excellent switching characteristics and low on-resistance. Its maximum drain-source voltage (VDS) is 40V and the gate-source voltage (VGS) range is ±20V. The MOSFET has a threshold voltage (Vth) of 2.5V, an on-resistance (RDS(ON)) of 6mΩ at VGS=4.5V, and an RDS(ON) of 5mΩ at VGS=10V. The device supports a maximum continuous drain current (ID) of 85A and is manufactured using Trench technology, making it suitable for high-performance and low-power applications.
**AUIRFR4104TRR-VB** is a high-performance single N-channel MOSFET in TO252 package with excellent switching characteristics and low on-resistance. Its maximum drain-source voltage (VDS) is 40V and the gate-source voltage (VGS) range is ±20V. The MOSFET has a threshold voltage (Vth) of 2.5V, an on-resistance (RDS(ON)) of 6mΩ at VGS=4.5V, and an RDS(ON) of 5mΩ at VGS=10V. The device supports a maximum continuous drain current (ID) of 85A and is manufactured using Trench technology, making it suitable for high-performance and low-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 6(mΩ) | 5(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter description
- **Model**: AUIRFR4104TRR-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 85A
- **Technology**: Trench
- **Model**: AUIRFR4104TRR-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 85A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Power management**: This MOSFET is widely used in power switch modules, especially in high current and low power consumption power conversion circuits, because its low on-resistance can significantly improve conversion efficiency and reduce power consumption.
2. **Electric vehicles**: In the battery management system of electric vehicles, the high current carrying capacity and low on-resistance of AUIRFR4104TRR-VB make it an ideal choice, which can effectively control the current flow during battery charging and discharging.
3. **LED driver**: Suitable for LED drive circuits, it can provide stable current to ensure the normal operation of LEDs and reduce heat generation caused by switching losses.
4. **DC-DC converter**: In DC-DC converters, the low RDS(ON) characteristics of MOSFET can improve conversion efficiency and reduce energy loss, and is suitable for high-efficiency switching power supply designs.
5. **Power Amplifier**: In the power amplifier module, AUIRFR4104TRR-VB can be used for switching control of high-power signals, optimizing power transmission and improving the overall performance of the system.
1. **Power management**: This MOSFET is widely used in power switch modules, especially in high current and low power consumption power conversion circuits, because its low on-resistance can significantly improve conversion efficiency and reduce power consumption.
2. **Electric vehicles**: In the battery management system of electric vehicles, the high current carrying capacity and low on-resistance of AUIRFR4104TRR-VB make it an ideal choice, which can effectively control the current flow during battery charging and discharging.
3. **LED driver**: Suitable for LED drive circuits, it can provide stable current to ensure the normal operation of LEDs and reduce heat generation caused by switching losses.
4. **DC-DC converter**: In DC-DC converters, the low RDS(ON) characteristics of MOSFET can improve conversion efficiency and reduce energy loss, and is suitable for high-efficiency switching power supply designs.
5. **Power Amplifier**: In the power amplifier module, AUIRFR4104TRR-VB can be used for switching control of high-power signals, optimizing power transmission and improving the overall performance of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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