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AUIRFR3504ZTRPBF-VB Product details
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Product Introduction
AUIRFR3504ZTRPBF is a single N-channel field effect transistor (MOSFET) in a TO-252 package. This device is designed for high-performance, low on-resistance applications and is suitable for applications requiring high current and low voltage drop. It has a continuous drain current capability of up to 85A, a VDS (drain-source voltage) of 40V, good switching characteristics and high temperature resistance, and is widely used in power management and switching circuits.
AUIRFR3504ZTRPBF is a single N-channel field effect transistor (MOSFET) in a TO-252 package. This device is designed for high-performance, low on-resistance applications and is suitable for applications requiring high current and low voltage drop. It has a continuous drain current capability of up to 85A, a VDS (drain-source voltage) of 40V, good switching characteristics and high temperature resistance, and is widely used in power management and switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 6(mΩ) | 5(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: AUIRFR3504ZTRPBF
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ (VGS = 4.5V)
- 5mΩ (VGS = 10V)
- **Continuous drain current (ID)**: 85A
- **Technology**: Trench
- **Model**: AUIRFR3504ZTRPBF
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ (VGS = 4.5V)
- 5mΩ (VGS = 10V)
- **Continuous drain current (ID)**: 85A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Power management**: This MOSFET is suitable for high-efficiency power management systems such as DC-DC converters and battery management systems because its low on-resistance can significantly reduce power consumption and heat generation.
2. **Switching circuit**: In switching power supplies, load switches, and motor drive circuits, the AUIRFR3504ZTRPBF can provide reliable switching performance with its high current carrying capacity and low on-resistance to ensure system stability and efficiency.
3. **Power amplifier**: In power amplifier modules, this MOSFET can effectively reduce power loss and improve the working efficiency of the amplifier, and is suitable for high power demand occasions.
4. **Automotive electronics**: Used in automotive power modules and electric vehicle drive systems, it can effectively improve the reliability and performance of automotive electronic systems due to its high current handling capability and high temperature resistance.
1. **Power management**: This MOSFET is suitable for high-efficiency power management systems such as DC-DC converters and battery management systems because its low on-resistance can significantly reduce power consumption and heat generation.
2. **Switching circuit**: In switching power supplies, load switches, and motor drive circuits, the AUIRFR3504ZTRPBF can provide reliable switching performance with its high current carrying capacity and low on-resistance to ensure system stability and efficiency.
3. **Power amplifier**: In power amplifier modules, this MOSFET can effectively reduce power loss and improve the working efficiency of the amplifier, and is suitable for high power demand occasions.
4. **Automotive electronics**: Used in automotive power modules and electric vehicle drive systems, it can effectively improve the reliability and performance of automotive electronic systems due to its high current handling capability and high temperature resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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