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AUIRFR2905ZTR-VB Product details

Product introduction:

Product Introduction

AUIRFR2905ZTR-VB is a high-performance N-channel MOSFET in a TO252 package. It is designed for high-power power management and switching applications, supporting a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. The threshold voltage (Vth) of this MOSFET is 2.5V, ensuring stable conduction under common gate voltages. AUIRFR2905ZTR-VB has an on-resistance (RDS(ON)) of 13mΩ at a gate drive voltage of 4.5V, which drops to 10mΩ at a gate drive voltage of 10V, providing extremely low conduction losses. This MOSFET has a maximum continuous drain current (ID) of 58A and is produced using trench technology. It has excellent switching performance and high power handling capabilities, making it suitable for a variety of high-efficiency power control applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 60V 2.5V 58A 13(mΩ) 10(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 60V 2.5V 58A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 60V 2.5V 58A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description

- **Model**: AUIRFR2905ZTR-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 58A
- **Technology**: Trench

Domain and module applications:

Applications and modules

AUIRFR2905ZTR-VB has excellent current handling capability and low on-resistance, suitable for multiple high-efficiency power control fields:

1. **Power Management**: In DC-DC converters and high-efficiency power modules, the low on-resistance and high current capability of this MOSFET make it an ideal choice. It can effectively reduce conduction losses, improve system efficiency, and meet the stability requirements of high-power power supplies.

2. **Motor Drive**: In industrial motor drives and automotive motor control systems, AUIRFR2905ZTR-VB provides low on-resistance and high current carrying capacity. It can provide reliable switching control during motor starting, running and speed regulation, optimize motor performance and improve overall system energy efficiency.

3. **Automotive Electronics**: In automotive electronic devices such as power window control and high-power switching applications, AUIRFR2905ZTR-VB provides high efficiency and high reliability. Its low on-resistance and high current capability ensure stable operation in the on-board electrical system and meet the power and durability requirements of automotive applications.

4. **Industrial Automation**: In industrial automation systems, especially high-power PLC control and switching power supply applications, the high current capability and low on-resistance of this MOSFET ensure reliable operation in harsh working environments. It can effectively manage high-power loads and improve the overall efficiency and stability of the system.

5. **Consumer Electronics**: In high-power consumer electronics such as LED drivers and high-power audio systems, the low on-resistance and high current handling capability of AUIRFR2905ZTR-VB make it suitable for these applications. It can provide efficient switching control to ensure long-term stable operation of the equipment.

AUIRFR2905ZTR-VB is a high-current, high-efficiency N-channel MOSFET suitable for a variety of high-efficiency power control applications such as power management, motor drives, automotive electronics, industrial automation and consumer electronics. Its excellent conduction performance and stability make it excel in these fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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