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AUIRFR2607ZTR-VB Product details
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Product Introduction
AUIRFR2607ZTR-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and high current applications. This MOSFET uses advanced trench technology, has low on-resistance and high current handling capability, and is suitable for a variety of applications requiring high performance and high reliability. Its excellent switching characteristics and low power consumption make it perform well in high voltage and high current environments.
AUIRFR2607ZTR-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and high current applications. This MOSFET uses advanced trench technology, has low on-resistance and high current handling capability, and is suitable for a variety of applications requiring high performance and high reliability. Its excellent switching characteristics and low power consumption make it perform well in high voltage and high current environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | 18(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: AUIRFR2607ZTR-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=10V
- **Drain current (ID)**: 45A
- **Technology**: Trench
- **Model**: AUIRFR2607ZTR-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=10V
- **Drain current (ID)**: 45A
- **Technology**: Trench
Domain and module applications：
Applications and module examples: 1. **Power management system**: AUIRFR2607ZTR-VB performs well in power management systems. Its low on-resistance and high current capability make it an ideal choice for power switches and voltage regulator modules. It can effectively handle high currents, reduce power losses, and improve the efficiency and stability of power systems. 2. **DC-DC converter**: This MOSFET can provide stable current control in high voltage environments in DC-DC converter applications. Its low on-resistance reduces energy losses and helps improve conversion efficiency. It is particularly suitable for applications that require high performance and high reliability, such as server power supplies and industrial power converters. 3. **Electric vehicle (EV) control system**: In the power and drive control systems of electric vehicles, AUIRFR2607ZTR-VB can handle high voltage and high current requirements, providing high-efficiency power switch solutions for electric vehicles. Its high voltage resistance and high current handling capabilities make it excellent in motor control and battery management of electric vehicles.
4. **High-power LED driver**:
This MOSFET is suitable for switching control of high-power LED drivers. Its low on-resistance and high current capability ensure efficient LED driving, which can effectively control the switching and dimming of high-power LEDs, and improve the performance and life of LED lighting systems.
5. **Battery protection circuit**:
In the battery protection circuit, AUIRFR2607ZTR-VB is used to protect the battery from overcurrent and overvoltage. Its high voltage tolerance and low on-resistance enable it to provide reliable protection functions in battery management and protection circuits, ensuring the safety and stability of the battery system.
The high voltage tolerance and low on-resistance of AUIRFR2607ZTR-VB enable it to perform well in a variety of high-voltage and high-current applications, providing a reliable solution for various high-efficiency power and switching needs.
4. **High-power LED driver**:
This MOSFET is suitable for switching control of high-power LED drivers. Its low on-resistance and high current capability ensure efficient LED driving, which can effectively control the switching and dimming of high-power LEDs, and improve the performance and life of LED lighting systems.
5. **Battery protection circuit**:
In the battery protection circuit, AUIRFR2607ZTR-VB is used to protect the battery from overcurrent and overvoltage. Its high voltage tolerance and low on-resistance enable it to provide reliable protection functions in battery management and protection circuits, ensuring the safety and stability of the battery system.
The high voltage tolerance and low on-resistance of AUIRFR2607ZTR-VB enable it to perform well in a variety of high-voltage and high-current applications, providing a reliable solution for various high-efficiency power and switching needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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