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AUIRF7379QTRPBF-VB Product details

Product introduction:

Product Introduction

AUIRF7379QTRPBF-VB is a high-performance dual-channel MOSFET in SOP8 package. The device integrates an N-channel and a P-channel MOSFET and is designed to handle medium voltage and current applications. Its maximum drain-source voltage is ±30V and the drain current is ±8A. Using Trench technology, the MOSFET has a low on-resistance, ensuring efficient switching performance and excellent power management capabilities, which is very suitable for applications requiring dual-channel control.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A 24/50(mΩ) 18/40(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+P
Detailed parameter description

- **Package**: SOP8
- **Configuration**: Dual N+P-Channel
- **Drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.6V (N channel) / -1.7V (P channel)
- **On-resistance (RDS(ON))**:
- 24mΩ (N channel) @ VGS = 4.5V
- 18mΩ (N channel) @ VGS = 10V
- 50mΩ (P channel) @ VGS = 4.5V
- 40mΩ (P channel) @ VGS = 10V
- **Drain current (ID)**: ±8A
- **Technology**: Trench

Domain and module applications:

Application fields and modules

The dual-channel configuration and good electrical performance of AUIRF7379QTRPBF-VB make it widely used in multiple fields and modules:

1. **Battery Management System (BMS)**:
- In the battery management system, this MOSFET can be used as a battery protection switch to manage the charging and discharging process to ensure the safety and life of the battery. Its dual-channel configuration allows simultaneous control of multiple battery cells to optimize system efficiency and protection functions.

2. **DC Motor Drive**:
- In DC motor drive applications, AUIRF7379QTRPBF-VB can be used as a switching element in the H-bridge circuit to control the forward and reverse rotation and speed regulation of the motor. Its low on-resistance and high current handling capability ensure efficient and stable motor drive.

3. **Power Switching and Management**:
- This MOSFET is suitable for power switching and management systems to switch between different power sources and provide reliable power management and protection. Its dual-channel design allows multiple power management functions to be implemented in a compact board space.

4. **Load Switch**:
- In load switch applications, the AUIRF7379QTRPBF-VB can be used as an efficient load switch to control the power supply of various electronic devices, ensuring stable operation of the equipment and optimization of power management.

5. **Voltage Regulation Module**:
- In the voltage regulation module, this MOSFET can be used as the switching element of the regulator, providing precise voltage control and efficient power conversion, suitable for electronic devices and systems that require precise voltage regulation.

Through these application examples, the AUIRF7379QTRPBF-VB shows its wide applicability in medium voltage and current applications, and is an ideal choice for a variety of power management and control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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