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AUIRF2903ZS-VB Product details
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Product Introduction
AUIRF2903ZS-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and low voltage applications. Its maximum drain-source voltage is 30V and it can handle drain currents up to 260A. With its ultra-low on-resistance and Trench technology, AUIRF2903ZS-VB provides excellent switching performance and efficient power management, suitable for applications requiring high current and low power consumption.
AUIRF2903ZS-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and low voltage applications. Its maximum drain-source voltage is 30V and it can handle drain currents up to 260A. With its ultra-low on-resistance and Trench technology, AUIRF2903ZS-VB provides excellent switching performance and efficient power management, suitable for applications requiring high current and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | 1.6(mΩ) | 1.4(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Drain-Source Voltage(VDS)**: 30V
- **Gate-Source Voltage(VGS)**: ±20V
- **Threshold Voltage(Vth)**: 1.7V
- **On-Resistance(RDS(ON))**:
- 1.6mΩ @ VGS = 4.5V
- 1.4mΩ @ VGS = 10V
- **Drain Current(ID)**: 260A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Drain-Source Voltage(VDS)**: 30V
- **Gate-Source Voltage(VGS)**: ±20V
- **Threshold Voltage(Vth)**: 1.7V
- **On-Resistance(RDS(ON))**:
- 1.6mΩ @ VGS = 4.5V
- 1.4mΩ @ VGS = 10V
- **Drain Current(ID)**: 260A
- **Technology**: Trench
Domain and module applications：
Applications and modules
The high current capability and ultra-low on-resistance of AUIRF2903ZS-VB enable it to excel in multiple fields and modules:
1. **High-efficiency power converter**:
- In high-efficiency power converters (such as high-power switching power supplies and DC-DC converters), AUIRF2903ZS-VB can be used as a switching element to provide extremely low power loss and excellent power conversion efficiency, optimizing power management and system performance.
2. **Electric vehicle (EV) battery management**:
- In the battery management system of electric vehicles, this MOSFET can handle high current loads such as battery switching and power control, ensuring the stability and efficiency of the battery system and supporting the reliable operation of electric vehicles.
3. **Industrial motor drive**:
- In industrial motor drive applications, AUIRF2903ZS-VB can withstand high current loads, achieve efficient motor power control, improve motor performance and system stability, and is suitable for high-power motor control and regulation.
4. **High-power LED lighting**:
- This MOSFET is suitable for high-power LED lighting systems as a switching element, providing stable current supply and efficient power management to ensure the performance and stability of LED lighting systems.
5. **Power switching and power regulation**:
- In various power switching and power regulation modules, AUIRF2903ZS-VB can be used as the main switching element to support high current loads and low power consumption applications, improving the overall efficiency and stability of the system.
Through these application examples, AUIRF2903ZS-VB shows its wide applicability in high current and low voltage applications, and is an ideal choice for a variety of power management and power control systems.
The high current capability and ultra-low on-resistance of AUIRF2903ZS-VB enable it to excel in multiple fields and modules:
1. **High-efficiency power converter**:
- In high-efficiency power converters (such as high-power switching power supplies and DC-DC converters), AUIRF2903ZS-VB can be used as a switching element to provide extremely low power loss and excellent power conversion efficiency, optimizing power management and system performance.
2. **Electric vehicle (EV) battery management**:
- In the battery management system of electric vehicles, this MOSFET can handle high current loads such as battery switching and power control, ensuring the stability and efficiency of the battery system and supporting the reliable operation of electric vehicles.
3. **Industrial motor drive**:
- In industrial motor drive applications, AUIRF2903ZS-VB can withstand high current loads, achieve efficient motor power control, improve motor performance and system stability, and is suitable for high-power motor control and regulation.
4. **High-power LED lighting**:
- This MOSFET is suitable for high-power LED lighting systems as a switching element, providing stable current supply and efficient power management to ensure the performance and stability of LED lighting systems.
5. **Power switching and power regulation**:
- In various power switching and power regulation modules, AUIRF2903ZS-VB can be used as the main switching element to support high current loads and low power consumption applications, improving the overall efficiency and stability of the system.
Through these application examples, AUIRF2903ZS-VB shows its wide applicability in high current and low voltage applications, and is an ideal choice for a variety of power management and power control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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