AUIRF1010EZS-VB Product details
Product introduction:
AUIRF1010EZS-VB is a high-performance single N-channel MOSFET in a TO263 package, designed for high current and high efficiency switching applications. Utilizing advanced trench technology, this MOSFET can withstand drain-source voltages (VDS) up to 60V and has a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3V, providing a low on-resistance (RDS(ON)) of 4mΩ at a gate drive voltage of 10V. With a maximum continuous drain current (ID) of 150A, the AUIRF1010EZS-VB is suitable for a variety of applications requiring high current and high efficiency.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Model**: AUIRF1010EZS-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications:
The high current handling capability and low on-resistance of AUIRF1010EZS-VB make it very suitable for the following applications and modules:
1. **Power management systems**: In power converters and power management modules, the low on-resistance and high current capability of AUIRF1010EZS-VB can provide efficient power switching solutions for high power DC-DC converters, switching power supplies and battery management systems.
2. **Industrial automation**: In industrial equipment and automation systems, such as motor drives and industrial control systems, AUIRF1010EZS-VB can handle high current loads, optimize power switching, and improve system performance and reliability.
3. **Consumer electronics**: In consumer electronics products, such as high power audio, computer power modules and game consoles, the high current capability and low on-resistance of AUIRF1010EZS-VB ensure efficient power conversion and lower power consumption to meet high power requirements.
4. **Automotive electronics**: In automotive electronic systems, such as electric power steering systems, electric fuel pumps, and battery management systems, the AUIRF1010EZS-VB is able to handle high current loads and provide a stable power switching solution for automotive systems.
5. **Communication infrastructure**: In communication base stations and network equipment, the AUIRF1010EZS-VB can be used in power regulation and distribution modules to ensure stable operation of communication equipment under high load conditions, and is suitable for communication infrastructure that requires high reliability.
The AUIRF1010EZS-VB is an N-channel MOSFET that excels in high current applications. Its high current handling capability and low on-resistance make it widely used in multiple fields, especially in systems that require high-efficiency power switching and control.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image