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AUIRF1010EZS-VB Product details

Product introduction:

Product Introduction
AUIRF1010EZS-VB is a high-performance single N-channel MOSFET in a TO263 package, designed for high current and high efficiency switching applications. Utilizing advanced trench technology, this MOSFET can withstand drain-source voltages (VDS) up to 60V and has a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3V, providing a low on-resistance (RDS(ON)) of 4mΩ at a gate drive voltage of 10V. With a maximum continuous drain current (ID) of 150A, the AUIRF1010EZS-VB is suitable for a variety of applications requiring high current and high efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 60V 3V 150A 4(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 60V 3V 150A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 60V 3V 150A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description
- **Model**: AUIRF1010EZS-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench

Domain and module applications:

Applications and modules
The high current handling capability and low on-resistance of AUIRF1010EZS-VB make it very suitable for the following applications and modules:

1. **Power management systems**: In power converters and power management modules, the low on-resistance and high current capability of AUIRF1010EZS-VB can provide efficient power switching solutions for high power DC-DC converters, switching power supplies and battery management systems.

2. **Industrial automation**: In industrial equipment and automation systems, such as motor drives and industrial control systems, AUIRF1010EZS-VB can handle high current loads, optimize power switching, and improve system performance and reliability.

3. **Consumer electronics**: In consumer electronics products, such as high power audio, computer power modules and game consoles, the high current capability and low on-resistance of AUIRF1010EZS-VB ensure efficient power conversion and lower power consumption to meet high power requirements.

4. **Automotive electronics**: In automotive electronic systems, such as electric power steering systems, electric fuel pumps, and battery management systems, the AUIRF1010EZS-VB is able to handle high current loads and provide a stable power switching solution for automotive systems.

5. **Communication infrastructure**: In communication base stations and network equipment, the AUIRF1010EZS-VB can be used in power regulation and distribution modules to ensure stable operation of communication equipment under high load conditions, and is suitable for communication infrastructure that requires high reliability.

The AUIRF1010EZS-VB is an N-channel MOSFET that excels in high current applications. Its high current handling capability and low on-resistance make it widely used in multiple fields, especially in systems that require high-efficiency power switching and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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