AUF2805S-VB Product details
Product introduction:
AUF2805S-VB is a high-performance single-channel N-channel MOSFET in TO263 package, designed for high current and high efficiency applications. Its maximum drain-source voltage (VDS) is 60V and the maximum gate-source voltage (VGS) is ±20V. The threshold voltage (Vth) of this MOSFET is 3V and it uses trench technology to provide low on-resistance and extremely high current handling capability. AUF2805S-VB performs well in applications that need to handle high currents and have strict requirements on power loss.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | 12(mΩ) | 3.2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package**: TO263
- **Configuration**: Single channel N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 3.2mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 210A
- **Process**: Trench technology
Domain and module applications:
The high current handling capability and extremely low on-resistance of the AUF2805S-VB MOSFET enable it to excel in multiple high-performance and high-reliability applications. Here are some specific application examples:
1. **Power Management**: In high-power power management systems, such as power converters and power distribution systems, the AUF2805S-VB can be used as an efficient switching element. Its low on-resistance and high current capability improve the power conversion efficiency, reduce power losses, and optimize power management.
2. **Motor Drive**: This MOSFET is suitable for high-power motor drive systems, such as electric vehicles and industrial motor drives. Its high current handling capability and low on-resistance ensure smooth operation of the motor and improve the overall efficiency of the system to adapt to high-load working conditions.
3. **Inverter**: In high-performance inverter applications, such as solar inverters and UPS systems, AUF2805S-VB provides low on-resistance and high current capability, improving inverter efficiency and stability. This MOSFET can handle large current loads, ensuring efficient conversion and stable output of the system.
4. **Battery Management System**: In battery management systems, especially in applications that handle high currents, such as high-capacity battery packs, AUF2805S-VB can be used as a switching element to prevent overcurrent and short circuits, improving system safety and reliability. Its high current handling capability makes battery management more efficient and safe.
5. **Automotive Electronics**: In automotive electronic systems, such as lighting control, power seats and power windows, AUF2805S-VB can be used as a switching element to provide efficient power control and management. Its superior current handling capability and low on-resistance improve the performance and reliability of automotive electronic equipment.
By integrating the AUF2805S-VB into these applications, efficient power control can be achieved, circuit performance can be optimized, and high system performance and reliability can be ensured.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image