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AUF1010EZS-VB Product details
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AUF1010EZS-VB Product Introduction
AUF1010EZS-VB is a single-channel N-channel MOSFET in TO263 package, designed for high current and high-efficiency applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, and the maximum gate-source voltage (VGS) is ±20V. Its threshold voltage (Vth) is 3V, and it uses trench technology to provide extremely low on-resistance and high current handling capability. This makes the AUF1010EZS-VB excellent in applications that need to handle high currents and have strict requirements on power loss.
AUF1010EZS-VB is a single-channel N-channel MOSFET in TO263 package, designed for high current and high-efficiency applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, and the maximum gate-source voltage (VGS) is ±20V. Its threshold voltage (Vth) is 3V, and it uses trench technology to provide extremely low on-resistance and high current handling capability. This makes the AUF1010EZS-VB excellent in applications that need to handle high currents and have strict requirements on power loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single channel N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Process**: Trench technology
- **Package**: TO263
- **Configuration**: Single channel N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Process**: Trench technology
Domain and module applications：
Application Examples
The high current handling capability and extremely low on-resistance of the AUF1010EZS-VB MOSFET enable it to excel in a number of high-performance applications. Here are some application examples:
1. **Power Management**: In high-power power management systems, such as power converters and power distribution systems, the AUF1010EZS-VB can be used as an efficient switching element. Its low on-resistance and high current capability improve the power conversion efficiency and reduce power losses.
2. **Motor Drive**: This MOSFET is suitable for high-power motor drive systems, such as electric vehicles and industrial motor drives. Its high current handling capability ensures smooth operation of the motor and improves the overall efficiency of the system.
3. **Inverter**: In high-performance inverter applications, such as solar inverters and UPS systems, the AUF1010EZS-VB provides low on-resistance and high current capability, improving the efficiency and stability of the inverter.
4. **Battery Management System**: In battery management systems, especially in applications that need to handle high currents, such as high-capacity battery packs, the AUF1010EZS-VB can be used as a switching element to prevent overcurrent and short circuits, optimizing battery use and life.
5. **Automotive Electronics**: In automotive electronic systems, such as lighting control, power seats, and power windows, the AUF1010EZS-VB can be used as a switching element to provide efficient power control and management, improving the performance and reliability of automotive electronic equipment.
By integrating the AUF1010EZS-VB into these applications, efficient power control can be achieved, circuit performance can be optimized, and high performance and reliability of the system can be ensured.
The high current handling capability and extremely low on-resistance of the AUF1010EZS-VB MOSFET enable it to excel in a number of high-performance applications. Here are some application examples:
1. **Power Management**: In high-power power management systems, such as power converters and power distribution systems, the AUF1010EZS-VB can be used as an efficient switching element. Its low on-resistance and high current capability improve the power conversion efficiency and reduce power losses.
2. **Motor Drive**: This MOSFET is suitable for high-power motor drive systems, such as electric vehicles and industrial motor drives. Its high current handling capability ensures smooth operation of the motor and improves the overall efficiency of the system.
3. **Inverter**: In high-performance inverter applications, such as solar inverters and UPS systems, the AUF1010EZS-VB provides low on-resistance and high current capability, improving the efficiency and stability of the inverter.
4. **Battery Management System**: In battery management systems, especially in applications that need to handle high currents, such as high-capacity battery packs, the AUF1010EZS-VB can be used as a switching element to prevent overcurrent and short circuits, optimizing battery use and life.
5. **Automotive Electronics**: In automotive electronic systems, such as lighting control, power seats, and power windows, the AUF1010EZS-VB can be used as a switching element to provide efficient power control and management, improving the performance and reliability of automotive electronic equipment.
By integrating the AUF1010EZS-VB into these applications, efficient power control can be achieved, circuit performance can be optimized, and high performance and reliability of the system can be ensured.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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