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APT6025BVR-VB Product details
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APT6025BVR-VB Product Introduction
The APT6025BVR-VB is a high voltage, high power single N-Channel MOSFET packaged in a TO247 package. Using SJ_Multi-EPI technology, this MOSFET can handle drain-source voltages up to 650V, suitable for high voltage and high power applications. It is designed to provide stable switching performance and excellent current control capabilities.
The APT6025BVR-VB is a high voltage, high power single N-Channel MOSFET packaged in a TO247 package. Using SJ_Multi-EPI technology, this MOSFET can handle drain-source voltages up to 650V, suitable for high voltage and high power applications. It is designed to provide stable switching performance and excellent current control capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Package:** TO247
- **Configuration:** Single N-Channel
- **Drain-Source Voltage (VDS):** 650V
- **Gate-Source Voltage (VGS):** 30（±V）
- **Threshold Voltage (Vth):** 3.5V
- **On-Resistance (RDS(ON)):** 160mΩ @ VGS=10V
- **Continuous Drain Current (ID):** 20A
- **Technology:** SJ_Multi-EPI
- **Package:** TO247
- **Configuration:** Single N-Channel
- **Drain-Source Voltage (VDS):** 650V
- **Gate-Source Voltage (VGS):** 30（±V）
- **Threshold Voltage (Vth):** 3.5V
- **On-Resistance (RDS(ON)):** 160mΩ @ VGS=10V
- **Continuous Drain Current (ID):** 20A
- **Technology:** SJ_Multi-EPI
Domain and module applications：
Applications and Modules
1. **High-voltage Power Management:**
- The 650V VDS rating of the APT6025BVR-VB makes it ideal for high-voltage power management applications. For example, in high-voltage DC-DC converters and power regulator modules, this MOSFET can stably handle high voltages, ensuring the reliability and efficiency of the power system.
2. **Switching Power Supply:**
- In switching power supply designs, such as power adapters and battery chargers, the high voltage tolerance and low on-resistance characteristics of the APT6025BVR-VB ensure efficient current control. It can reduce power losses and improve the overall efficiency of the system.
3. **Industrial Control:**
- Due to its high current handling capability, this MOSFET is suitable for high-voltage applications in industrial control systems, such as motor drives and high-power control modules. It can stably support the operation of high-power devices, improving the performance and reliability of industrial equipment.
4. **Energy Conversion:**
- The high voltage and high power capabilities of the APT6025BVR-VB make it an ideal choice in energy conversion devices, such as inverters and power amplifiers. Its stable switching performance and low on-resistance can improve the energy efficiency of the system and ensure stable power conversion.
5. **Electric Vehicles:**
- This MOSFET is also suitable for high-voltage applications in electric vehicles, such as electric drive systems and battery management systems. Its high current carrying capacity and excellent switching characteristics can support the high power requirements of electric vehicles and improve overall performance and efficiency.
In summary, the APT6025BVR-VB is a high-voltage, high-power single N-Channel MOSFET suitable for high-voltage power management, switching power supplies, industrial control, energy conversion and electric vehicles, providing stable current control and efficient switching performance.
1. **High-voltage Power Management:**
- The 650V VDS rating of the APT6025BVR-VB makes it ideal for high-voltage power management applications. For example, in high-voltage DC-DC converters and power regulator modules, this MOSFET can stably handle high voltages, ensuring the reliability and efficiency of the power system.
2. **Switching Power Supply:**
- In switching power supply designs, such as power adapters and battery chargers, the high voltage tolerance and low on-resistance characteristics of the APT6025BVR-VB ensure efficient current control. It can reduce power losses and improve the overall efficiency of the system.
3. **Industrial Control:**
- Due to its high current handling capability, this MOSFET is suitable for high-voltage applications in industrial control systems, such as motor drives and high-power control modules. It can stably support the operation of high-power devices, improving the performance and reliability of industrial equipment.
4. **Energy Conversion:**
- The high voltage and high power capabilities of the APT6025BVR-VB make it an ideal choice in energy conversion devices, such as inverters and power amplifiers. Its stable switching performance and low on-resistance can improve the energy efficiency of the system and ensure stable power conversion.
5. **Electric Vehicles:**
- This MOSFET is also suitable for high-voltage applications in electric vehicles, such as electric drive systems and battery management systems. Its high current carrying capacity and excellent switching characteristics can support the high power requirements of electric vehicles and improve overall performance and efficiency.
In summary, the APT6025BVR-VB is a high-voltage, high-power single N-Channel MOSFET suitable for high-voltage power management, switching power supplies, industrial control, energy conversion and electric vehicles, providing stable current control and efficient switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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