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APT47N60BC3G-VB Product details
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APT47N60BC3G-VB Product Introduction
APT47N60BC3G-VB is a single-channel N-channel MOSFET in TO247 package, designed for high voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, and the maximum gate-source voltage (VGS) is ±30V. Its threshold voltage (Vth) is 3.5V, and it uses SJ_Multi-EPI technology, which can provide high withstand voltage and low on-resistance, making APT47N60BC3G-VB suitable for various applications requiring high voltage and high current.
APT47N60BC3G-VB is a single-channel N-channel MOSFET in TO247 package, designed for high voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, and the maximum gate-source voltage (VGS) is ±30V. Its threshold voltage (Vth) is 3.5V, and it uses SJ_Multi-EPI technology, which can provide high withstand voltage and low on-resistance, making APT47N60BC3G-VB suitable for various applications requiring high voltage and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Package**: TO247
- **Configuration**: Single channel N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 47A
- **Process**: SJ_Multi-EPI technology
- **Package**: TO247
- **Configuration**: Single channel N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 47A
- **Process**: SJ_Multi-EPI technology
Domain and module applications：
Application Examples
The high voltage and high current handling capabilities of the APT47N60BC3G-VB MOSFET make it suitable for a variety of high power and high voltage applications. Here are some application examples:
1. **High Voltage Power Converter**: In high voltage power converters, such as industrial power supplies and power systems, the APT47N60BC3G-VB can be used as a switching element for efficient voltage conversion and power management. Its high withstand voltage capability and low on-resistance ensure efficient operation and stability of the converter.
2. **Inverter**: This MOSFET is suitable for solar inverters and UPS systems, providing high voltage tolerance and high current handling capabilities to ensure the reliability and high efficiency of the inverter.
3. **Power Amplifier**: In high power RF amplifiers and broadcast equipment, the APT47N60BC3G-VB can be used as a power switching element to handle high voltage and high current, improving the performance and stability of the amplifier.
4. **Motor drive**: In high-power motor drive applications, such as electric vehicles and large industrial motors, the APT47N60BC3G-VB provides high current handling capabilities to ensure stable operation and efficient performance of the motor.
5. **Battery management system**: In battery management systems, especially high-voltage battery packs, the APT47N60BC3G-VB can be used to protect the battery pack from overcurrent and short circuits, improving system safety and reliability.
By integrating the APT47N60BC3G-VB into these applications, efficient power control can be achieved, circuit performance can be optimized, and the reliability and stability of the overall system can be improved.
The high voltage and high current handling capabilities of the APT47N60BC3G-VB MOSFET make it suitable for a variety of high power and high voltage applications. Here are some application examples:
1. **High Voltage Power Converter**: In high voltage power converters, such as industrial power supplies and power systems, the APT47N60BC3G-VB can be used as a switching element for efficient voltage conversion and power management. Its high withstand voltage capability and low on-resistance ensure efficient operation and stability of the converter.
2. **Inverter**: This MOSFET is suitable for solar inverters and UPS systems, providing high voltage tolerance and high current handling capabilities to ensure the reliability and high efficiency of the inverter.
3. **Power Amplifier**: In high power RF amplifiers and broadcast equipment, the APT47N60BC3G-VB can be used as a power switching element to handle high voltage and high current, improving the performance and stability of the amplifier.
4. **Motor drive**: In high-power motor drive applications, such as electric vehicles and large industrial motors, the APT47N60BC3G-VB provides high current handling capabilities to ensure stable operation and efficient performance of the motor.
5. **Battery management system**: In battery management systems, especially high-voltage battery packs, the APT47N60BC3G-VB can be used to protect the battery pack from overcurrent and short circuits, improving system safety and reliability.
By integrating the APT47N60BC3G-VB into these applications, efficient power control can be achieved, circuit performance can be optimized, and the reliability and stability of the overall system can be improved.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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