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APT34M60B-VB Product details
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APT34M60B-VB Product Introduction
APT34M60B-VB is a single N-channel MOSFET in TO247 package. This MOSFET adopts advanced SJ_Multi-EPI technology and is designed for high voltage applications. It has excellent switching performance and high voltage resistance. Its design goal is to provide efficient current control and stable power management, especially suitable for high voltage and high power electronic circuits.
APT34M60B-VB is a single N-channel MOSFET in TO247 package. This MOSFET adopts advanced SJ_Multi-EPI technology and is designed for high voltage applications. It has excellent switching performance and high voltage resistance. Its design goal is to provide efficient current control and stable power management, especially suitable for high voltage and high power electronic circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Package**: TO247
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: 30V (±V)
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- At 10V: 75mΩ
- **Continuous drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
- **Package**: TO247
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: 30V (±V)
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- At 10V: 75mΩ
- **Continuous drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application examples
1. **High-voltage power converter**:
- **Example**: Used in high-voltage power converters and inverters, such as solar inverters and high-voltage power modules. The high voltage withstand capability and low on-resistance of APT34M60B-VB ensure efficient power conversion and stable power output.
2. **Electric vehicle charging system**:
- **Example**: Used in the charging system of electric vehicles. The high withstand voltage and high current characteristics of MOSFET enable it to handle the high power demand during the charging process of electric vehicles, improve charging efficiency and system reliability.
3. **Industrial motor drive**:
- **Example**: Used in industrial motor drive systems. The high current capability and high withstand voltage characteristics of APT34M60B-VB can support high-power motor control and improve system performance and durability.
4. **Switching power supply and high-power switch**:
- **Example**: Used in high-power switching power supply and load control circuits. The high withstand voltage and low RDS(ON) characteristics of this MOSFET provide efficient switching control and are suitable for applications requiring high voltage and high current handling.
The high voltage withstand and high current handling capabilities of the APT34M60B-VB make it an excellent performer in high power and high voltage applications, especially for power management and switching operations that require high efficiency and reliability.
1. **High-voltage power converter**:
- **Example**: Used in high-voltage power converters and inverters, such as solar inverters and high-voltage power modules. The high voltage withstand capability and low on-resistance of APT34M60B-VB ensure efficient power conversion and stable power output.
2. **Electric vehicle charging system**:
- **Example**: Used in the charging system of electric vehicles. The high withstand voltage and high current characteristics of MOSFET enable it to handle the high power demand during the charging process of electric vehicles, improve charging efficiency and system reliability.
3. **Industrial motor drive**:
- **Example**: Used in industrial motor drive systems. The high current capability and high withstand voltage characteristics of APT34M60B-VB can support high-power motor control and improve system performance and durability.
4. **Switching power supply and high-power switch**:
- **Example**: Used in high-power switching power supply and load control circuits. The high withstand voltage and low RDS(ON) characteristics of this MOSFET provide efficient switching control and are suitable for applications requiring high voltage and high current handling.
The high voltage withstand and high current handling capabilities of the APT34M60B-VB make it an excellent performer in high power and high voltage applications, especially for power management and switching operations that require high efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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