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APT20M40BVR-VB Product details
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APT20M40BVR-VB Product Introduction
The APT20M40BVR-VB is a single-channel N-channel MOSFET in a TO247 package designed for high-power and high-voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 200V and the maximum gate-source voltage (VGS) is ±20V. It has a threshold voltage (Vth) of 4V and uses trench technology to provide low on-resistance and high current handling capability. This makes the APT20M40BVR-VB very suitable for use in electronic circuits that require high voltage and high current.
The APT20M40BVR-VB is a single-channel N-channel MOSFET in a TO247 package designed for high-power and high-voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 200V and the maximum gate-source voltage (VGS) is ±20V. It has a threshold voltage (Vth) of 4V and uses trench technology to provide low on-resistance and high current handling capability. This makes the APT20M40BVR-VB very suitable for use in electronic circuits that require high voltage and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | 21(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Package**: TO247
- **Configuration**: Single channel N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 4V
- **On-resistance (RDS(ON))**: 21mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 96A
- **Process**: Trench technology
- **Package**: TO247
- **Configuration**: Single channel N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 4V
- **On-resistance (RDS(ON))**: 21mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 96A
- **Process**: Trench technology
Domain and module applications：
Application Examples
The APT20M40BVR-VB MOSFET is suitable for a variety of high power and high voltage applications due to its high voltage and high current handling capabilities. Here are some application examples:
1. **High Power Power Converters**: In high power power converters, such as industrial power supplies and data center power supplies, the APT20M40BVR-VB can be used as a switching element for efficient voltage conversion and power management. Its low on-resistance helps reduce power losses and improve conversion efficiency.
2. **Motor Drive**: This MOSFET is suitable for high power motor drive systems, such as electric vehicles, power tools, and large industrial motors. Its high current handling capability ensures stable operation and reliability of the motor.
3. **Inverters**: In solar inverters and other high power inverters, the APT20M40BVR-VB can be used for efficient power switching and management. Its high voltage tolerance and low on-resistance improve the performance and stability of the inverter.
4. **Power Amplifier**: This MOSFET can also be used in power amplifiers, especially in applications that need to handle high voltage and high current, such as RF power amplifiers and broadcast equipment. Its excellent on-resistance and high current handling capability ensure efficient operation of the power amplifier.
5. **Automotive Electronics**: In automotive electronic systems, such as battery management systems and high-power load switches, the APT20M40BVR-VB can provide efficient power control and protection, improving the performance and reliability of automotive electronic equipment.
By integrating the APT20M40BVR-VB into these applications, efficient power control can be achieved, circuit performance can be optimized, and the reliability and stability of the overall system can be improved.
The APT20M40BVR-VB MOSFET is suitable for a variety of high power and high voltage applications due to its high voltage and high current handling capabilities. Here are some application examples:
1. **High Power Power Converters**: In high power power converters, such as industrial power supplies and data center power supplies, the APT20M40BVR-VB can be used as a switching element for efficient voltage conversion and power management. Its low on-resistance helps reduce power losses and improve conversion efficiency.
2. **Motor Drive**: This MOSFET is suitable for high power motor drive systems, such as electric vehicles, power tools, and large industrial motors. Its high current handling capability ensures stable operation and reliability of the motor.
3. **Inverters**: In solar inverters and other high power inverters, the APT20M40BVR-VB can be used for efficient power switching and management. Its high voltage tolerance and low on-resistance improve the performance and stability of the inverter.
4. **Power Amplifier**: This MOSFET can also be used in power amplifiers, especially in applications that need to handle high voltage and high current, such as RF power amplifiers and broadcast equipment. Its excellent on-resistance and high current handling capability ensure efficient operation of the power amplifier.
5. **Automotive Electronics**: In automotive electronic systems, such as battery management systems and high-power load switches, the APT20M40BVR-VB can provide efficient power control and protection, improving the performance and reliability of automotive electronic equipment.
By integrating the APT20M40BVR-VB into these applications, efficient power control can be achieved, circuit performance can be optimized, and the reliability and stability of the overall system can be improved.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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