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APT10M19BVR-VB Product details
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APT10M19BVR-VB Product Introduction
APT10M19BVR-VB is a single-channel N-channel MOSFET in TO247 package, designed for high-power applications. This MOSFET has a maximum drain-source voltage (VDS) of 100V and a maximum gate-source voltage (VGS) of ±20V. It uses trench technology to provide low on-resistance and high current handling capability. APT10M19BVR-VB is suitable for electronic applications that require high power handling and high efficiency, such as power converters and motor drive systems.
APT10M19BVR-VB is a single-channel N-channel MOSFET in TO247 package, designed for high-power applications. This MOSFET has a maximum drain-source voltage (VDS) of 100V and a maximum gate-source voltage (VGS) of ±20V. It uses trench technology to provide low on-resistance and high current handling capability. APT10M19BVR-VB is suitable for electronic applications that require high power handling and high efficiency, such as power converters and motor drive systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | 18(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Package**: TO247
- **Configuration**: Single channel N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 72A
- **Process**: Trench technology
- **Package**: TO247
- **Configuration**: Single channel N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 72A
- **Process**: Trench technology
Domain and module applications：
Application Examples
The high current handling capability and low on-resistance of the APT10M19BVR-VB MOSFET enable it to excel in a variety of fields and modules. Here are some application examples:
1. **Power Converter**: In high-power power converters, the APT10M19BVR-VB can be used as a switching element for efficient voltage conversion and power regulation. Its low on-resistance helps reduce power losses and improve power conversion efficiency.
2. **Motor Drive**: This MOSFET is suitable for motor drive systems such as electric vehicles, power tools, and robots. Its high current handling capability and low on-resistance ensure stable operation of the motor and improve overall system efficiency and reliability.
3. **Inverter**: In solar inverters and UPS systems, the APT10M19BVR-VB can be used for efficient power switching and management. Its excellent on-resistance characteristics and high current handling capability improve the overall performance and stability of the inverter.
4. **Power Amplifier**: This MOSFET can also be used in power amplifiers, especially in high-power RF applications such as communication base stations and broadcasting equipment. Its high current handling capability and low on-resistance ensure efficient operation of the power amplifier.
5. **Automotive Electronics**: In automotive electronic systems such as power seats, window lifts, and battery management systems, the APT10M19BVR-VB can be used as a switching element to provide efficient power control and management, improving the performance and reliability of automotive electronic equipment.
By integrating the APT10M19BVR-VB into these applications, efficient power control can be achieved, circuit performance can be optimized, and the overall reliability of the system can be improved.
The high current handling capability and low on-resistance of the APT10M19BVR-VB MOSFET enable it to excel in a variety of fields and modules. Here are some application examples:
1. **Power Converter**: In high-power power converters, the APT10M19BVR-VB can be used as a switching element for efficient voltage conversion and power regulation. Its low on-resistance helps reduce power losses and improve power conversion efficiency.
2. **Motor Drive**: This MOSFET is suitable for motor drive systems such as electric vehicles, power tools, and robots. Its high current handling capability and low on-resistance ensure stable operation of the motor and improve overall system efficiency and reliability.
3. **Inverter**: In solar inverters and UPS systems, the APT10M19BVR-VB can be used for efficient power switching and management. Its excellent on-resistance characteristics and high current handling capability improve the overall performance and stability of the inverter.
4. **Power Amplifier**: This MOSFET can also be used in power amplifiers, especially in high-power RF applications such as communication base stations and broadcasting equipment. Its high current handling capability and low on-resistance ensure efficient operation of the power amplifier.
5. **Automotive Electronics**: In automotive electronic systems such as power seats, window lifts, and battery management systems, the APT10M19BVR-VB can be used as a switching element to provide efficient power control and management, improving the performance and reliability of automotive electronic equipment.
By integrating the APT10M19BVR-VB into these applications, efficient power control can be achieved, circuit performance can be optimized, and the overall reliability of the system can be improved.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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