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APM7512NG-VB Product details
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Product Introduction
The APM7512NG-VB is a single N-channel MOSFET packaged in a TO263 housing. The device is manufactured using trench technology and is designed for high current, high voltage applications. Its low on-resistance and high current carrying capability make it ideal for applications requiring efficient energy management and high performance switching operations. The APM7512NG-VB is designed to provide excellent power control capabilities and reliable performance to meet the needs of industrial and consumer electronics.
The APM7512NG-VB is a single N-channel MOSFET packaged in a TO263 housing. The device is manufactured using trench technology and is designed for high current, high voltage applications. Its low on-resistance and high current carrying capability make it ideal for applications requiring efficient energy management and high performance switching operations. The APM7512NG-VB is designed to provide excellent power control capabilities and reliable performance to meet the needs of industrial and consumer electronics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 10(mΩ) | 6(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single channel (N-channel)
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- VGS = 4.5V: 10mΩ
- VGS = 10V: 6mΩ
- **Drain current (ID)**: 120A
- **Technology**: Trench technology
- **Package type**: TO263
- **Configuration**: Single channel (N-channel)
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- VGS = 4.5V: 10mΩ
- VGS = 10V: 6mΩ
- **Drain current (ID)**: 120A
- **Technology**: Trench technology
Domain and module applications：
Applications and Module Examples
1. **Power Management and Switching Power Supplies**:
- The APM7512NG-VB excels in switching power supplies and DC-DC converters, capable of handling high current and high voltage applications. Its low on-resistance and high current carrying capability make it very effective in efficient energy conversion and voltage regulation control, helping to improve the overall efficiency of the power system.
2. **Motor Drive**:
- In motor drive applications, this MOSFET can be used for the control and drive of high current motors. Its high current carrying capability and low RDS(ON) ensure efficient energy transfer and reliable operation during motor drive, making it very suitable in industrial motors and high-performance motor control systems.
3. **Power Switching and Load Control**:
- The APM7512NG-VB can be used in high power load switching and control applications, especially those that need to handle high currents. Its low on-resistance minimizes power dissipation in the switching state, thereby improving the overall energy efficiency and reliability of the system.
4. **Battery Management System**:
- In the battery management and protection system, this MOSFET can be used to control the battery charging and discharging process. Its high current carrying capacity and low on-resistance can effectively manage the battery charging speed and protect the battery from overcurrent and overheating.
The design and high performance characteristics of the APM7512NG-VB make it an ideal choice for handling high power and high current applications in modern electronic devices, especially in the fields of power management, motor drive and load control.
1. **Power Management and Switching Power Supplies**:
- The APM7512NG-VB excels in switching power supplies and DC-DC converters, capable of handling high current and high voltage applications. Its low on-resistance and high current carrying capability make it very effective in efficient energy conversion and voltage regulation control, helping to improve the overall efficiency of the power system.
2. **Motor Drive**:
- In motor drive applications, this MOSFET can be used for the control and drive of high current motors. Its high current carrying capability and low RDS(ON) ensure efficient energy transfer and reliable operation during motor drive, making it very suitable in industrial motors and high-performance motor control systems.
3. **Power Switching and Load Control**:
- The APM7512NG-VB can be used in high power load switching and control applications, especially those that need to handle high currents. Its low on-resistance minimizes power dissipation in the switching state, thereby improving the overall energy efficiency and reliability of the system.
4. **Battery Management System**:
- In the battery management and protection system, this MOSFET can be used to control the battery charging and discharging process. Its high current carrying capacity and low on-resistance can effectively manage the battery charging speed and protect the battery from overcurrent and overheating.
The design and high performance characteristics of the APM7512NG-VB make it an ideal choice for handling high power and high current applications in modern electronic devices, especially in the fields of power management, motor drive and load control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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