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AP99T03GJ-VB Product details
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Product Profile Details:
AP99T03GJ-VB is a single-channel N-channel field effect transistor (MOSFET) that uses high-performance trench technology and is designed for high-power applications. It has a drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 120A. One of the characteristics of this MOSFET is its extremely low on-resistance, with the following specific values:
- At VGS = 4.5V, the on-resistance RDS(ON) is 3mΩ
- At VGS = 10V, the on-resistance RDS(ON) is 2mΩ
Its threshold voltage (Vth) is 1.7V, and the gate-source voltage range during operation is ±20V.
AP99T03GJ-VB is a single-channel N-channel field effect transistor (MOSFET) that uses high-performance trench technology and is designed for high-power applications. It has a drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 120A. One of the characteristics of this MOSFET is its extremely low on-resistance, with the following specific values:
- At VGS = 4.5V, the on-resistance RDS(ON) is 3mΩ
- At VGS = 10V, the on-resistance RDS(ON) is 2mΩ
Its threshold voltage (Vth) is 1.7V, and the gate-source voltage range during operation is ±20V.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 120A | 3(mΩ) | 2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description:
- **Model**: AP99T03GJ-VB
- **Package**: TO251
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **Drain-source on-resistance (RDS(ON))**:
- When VGS = 4.5V, RDS(ON) = 3mΩ
- When VGS = 10V, RDS(ON) = 2mΩ
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench technology
- **Model**: AP99T03GJ-VB
- **Package**: TO251
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **Drain-source on-resistance (RDS(ON))**:
- When VGS = 4.5V, RDS(ON) = 3mΩ
- When VGS = 10V, RDS(ON) = 2mΩ
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench technology
Domain and module applications：
Application Examples:
1. **Power Management**:
AP99T03GJ-VB can be applied to high-efficiency DC-DC converters and switching power supplies, especially for power management systems in servers, data centers and communication equipment. Its low on-resistance and high current handling capability can significantly improve energy efficiency and reduce heat loss.
2. **Power Tools**:
This MOSFET is an ideal choice in the motor drive circuit of high-power power tools. Its high drain current and low on-resistance can provide strong power output, suitable for electric vehicles, heavy industrial equipment and other high-power power tools.
3. **Battery Management**:
AP99T03GJ-VB has important applications in the management and protection of large-capacity battery packs, such as electric vehicles, power storage systems and high-power consumer electronics. It can be used in battery charge and discharge control and protection circuits to ensure efficient and safe operation of battery systems.
4. **UPS (Uninterruptible Power Supply)**:
In UPS systems, the high current handling capability and low on-resistance of this MOSFET make it an ideal choice for switches and protection circuits. It can ensure stable backup power when the grid power is interrupted, supporting the continuous operation of critical equipment.
5. **LED Lighting**:
In power drivers for high-power LED lighting systems, AP99T03GJ-VB can provide stable current and low-loss power conversion, support high-efficiency driving of LED lamps, and improve the performance and reliability of lighting systems.
These examples demonstrate the wide application of AP99T03GJ-VB in multiple fields and modules, showing its superior performance and applicability under high-power and high-current requirements.
1. **Power Management**:
AP99T03GJ-VB can be applied to high-efficiency DC-DC converters and switching power supplies, especially for power management systems in servers, data centers and communication equipment. Its low on-resistance and high current handling capability can significantly improve energy efficiency and reduce heat loss.
2. **Power Tools**:
This MOSFET is an ideal choice in the motor drive circuit of high-power power tools. Its high drain current and low on-resistance can provide strong power output, suitable for electric vehicles, heavy industrial equipment and other high-power power tools.
3. **Battery Management**:
AP99T03GJ-VB has important applications in the management and protection of large-capacity battery packs, such as electric vehicles, power storage systems and high-power consumer electronics. It can be used in battery charge and discharge control and protection circuits to ensure efficient and safe operation of battery systems.
4. **UPS (Uninterruptible Power Supply)**:
In UPS systems, the high current handling capability and low on-resistance of this MOSFET make it an ideal choice for switches and protection circuits. It can ensure stable backup power when the grid power is interrupted, supporting the continuous operation of critical equipment.
5. **LED Lighting**:
In power drivers for high-power LED lighting systems, AP99T03GJ-VB can provide stable current and low-loss power conversion, support high-efficiency driving of LED lamps, and improve the performance and reliability of lighting systems.
These examples demonstrate the wide application of AP99T03GJ-VB in multiple fields and modules, showing its superior performance and applicability under high-power and high-current requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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