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AP99T03GH-VB Product details
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1. Product Introduction Details:
AP99T03GH-VB is a single-channel N-channel MOSFET manufactured using advanced trench technology. The device has high current carrying capacity and extremely low on-resistance, suitable for high-efficiency power management and high power density applications. The package is TO252, suitable for various industrial and consumer electronic devices.
AP99T03GH-VB is a single-channel N-channel MOSFET manufactured using advanced trench technology. The device has high current carrying capacity and extremely low on-resistance, suitable for high-efficiency power management and high power density applications. The package is TO252, suitable for various industrial and consumer electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 3(mΩ) | 2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description:
- **Device model: ** AP99T03GH-VB
- **Package type: ** TO252
- **Channel type: ** Single N-channel
- **Drain-source voltage (VDS): ** 30V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 1.7V
- **On-resistance (RDS(ON)): **
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Drain current (ID): ** 100A
- **Technical characteristics: ** Trench technology
- **Device model: ** AP99T03GH-VB
- **Package type: ** TO252
- **Channel type: ** Single N-channel
- **Drain-source voltage (VDS): ** 30V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 1.7V
- **On-resistance (RDS(ON)): **
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Drain current (ID): ** 100A
- **Technical characteristics: ** Trench technology
Domain and module applications：
3. Application Examples:
This MOSFET is suitable for the following fields and modules:
- **High-efficiency power management:** AP99T03GH-VB is suitable for high-efficiency power management systems such as server power supplies, data center power supplies, and industrial power modules. In these applications, the device can provide high current output and low conduction losses, ensuring high efficiency and stability of the power system.
- **Electric vehicles and battery management systems:** This MOSFET can be used in battery management systems and electric drive modules for electric vehicles to provide reliable current control and energy management. Its low on-resistance and high current capability make it suitable for battery charge and discharge control and drive circuits for high-power electric vehicles.
- **Consumer electronics:** AP99T03GH-VB can be used as a key component of power management and protection circuits in high-performance consumer electronics such as smartphones, tablets, and laptops, supporting long-term use and efficient energy consumption of the equipment.
- **Communication equipment and network systems:** Applicable to power management and current control modules in communication base stations, telecommunication equipment and network systems to ensure high efficiency and stable operation of the system, especially in application scenarios requiring high current and low loss.
The above examples show the wide application of AP99T03GH-VB in multiple circuit designs with high power, high efficiency and high performance requirements, taking advantage of its trench technology to ensure the performance and reliability of the circuit.
This MOSFET is suitable for the following fields and modules:
- **High-efficiency power management:** AP99T03GH-VB is suitable for high-efficiency power management systems such as server power supplies, data center power supplies, and industrial power modules. In these applications, the device can provide high current output and low conduction losses, ensuring high efficiency and stability of the power system.
- **Electric vehicles and battery management systems:** This MOSFET can be used in battery management systems and electric drive modules for electric vehicles to provide reliable current control and energy management. Its low on-resistance and high current capability make it suitable for battery charge and discharge control and drive circuits for high-power electric vehicles.
- **Consumer electronics:** AP99T03GH-VB can be used as a key component of power management and protection circuits in high-performance consumer electronics such as smartphones, tablets, and laptops, supporting long-term use and efficient energy consumption of the equipment.
- **Communication equipment and network systems:** Applicable to power management and current control modules in communication base stations, telecommunication equipment and network systems to ensure high efficiency and stable operation of the system, especially in application scenarios requiring high current and low loss.
The above examples show the wide application of AP99T03GH-VB in multiple circuit designs with high power, high efficiency and high performance requirements, taking advantage of its trench technology to ensure the performance and reliability of the circuit.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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