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AP9974GS-VB Product details
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Product Profile Details:
AP9974GS-VB is a single-channel N-channel field effect transistor (MOSFET) using trench technology for high-power applications. It has a drain-source voltage (VDS) of up to 60V and a maximum drain current (ID) of 75A. One of the features of this MOSFET is its low on-resistance, with the following values:
- At VGS = 4.5V, the on-resistance RDS(ON) is 12mΩ
- At VGS = 10V, the on-resistance RDS(ON) is 11mΩ
Its threshold voltage (Vth) is 1.7V, and the gate-source voltage range during operation is ±20V.
AP9974GS-VB is a single-channel N-channel field effect transistor (MOSFET) using trench technology for high-power applications. It has a drain-source voltage (VDS) of up to 60V and a maximum drain current (ID) of 75A. One of the features of this MOSFET is its low on-resistance, with the following values:
- At VGS = 4.5V, the on-resistance RDS(ON) is 12mΩ
- At VGS = 10V, the on-resistance RDS(ON) is 11mΩ
Its threshold voltage (Vth) is 1.7V, and the gate-source voltage range during operation is ±20V.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 12(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Model**: AP9974GS-VB
- **Package**: TO263
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **Drain-source on-resistance (RDS(ON))**:
- When VGS = 4.5V, RDS(ON) = 12mΩ
- When VGS = 10V, RDS(ON) = 11mΩ
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench technology
- **Model**: AP9974GS-VB
- **Package**: TO263
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **Drain-source on-resistance (RDS(ON))**:
- When VGS = 4.5V, RDS(ON) = 12mΩ
- When VGS = 10V, RDS(ON) = 11mΩ
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench technology
Domain and module applications：
Application Examples:
1. **Power Management**:
In high-efficiency DC-DC converters, the low on-resistance and high drain current of the AP9974GS-VB provide efficient power conversion for applications requiring high efficiency and high power density.
2. **Motor Drive**:
Due to its high current handling capability and low on-resistance, this MOSFET can be used in motor drive systems such as motor control in electric vehicles and industrial machinery.
3. **Power Switch**:
In high-voltage power switches, the high drain-source voltage and low on-resistance of the AP9974GS-VB make it a reliable choice that can handle high power and high-frequency switching requirements.
4. **Battery Management**:
In lithium battery management systems, this MOSFET can be used in battery protection circuits and charge and discharge control to ensure battery safety and efficiency.
5. **LED Lighting**:
Used in high-power LED drivers, with its high current handling capability and low loss characteristics, it supports high-efficiency driving of LED lamps.
These examples show the wide application of AP9974GS-VB in multiple fields and modules, thus demonstrating its superior performance and flexibility in high-power applications.
1. **Power Management**:
In high-efficiency DC-DC converters, the low on-resistance and high drain current of the AP9974GS-VB provide efficient power conversion for applications requiring high efficiency and high power density.
2. **Motor Drive**:
Due to its high current handling capability and low on-resistance, this MOSFET can be used in motor drive systems such as motor control in electric vehicles and industrial machinery.
3. **Power Switch**:
In high-voltage power switches, the high drain-source voltage and low on-resistance of the AP9974GS-VB make it a reliable choice that can handle high power and high-frequency switching requirements.
4. **Battery Management**:
In lithium battery management systems, this MOSFET can be used in battery protection circuits and charge and discharge control to ensure battery safety and efficiency.
5. **LED Lighting**:
Used in high-power LED drivers, with its high current handling capability and low loss characteristics, it supports high-efficiency driving of LED lamps.
These examples show the wide application of AP9974GS-VB in multiple fields and modules, thus demonstrating its superior performance and flexibility in high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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