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AP9960J-VB Product details
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AP9960J-VB MOSFET Product Introduction
The AP9960J-VB is a single N-channel MOSFET in a TO251 package, designed for high-efficiency applications. It has excellent on-resistance and high current handling capability, making it an ideal choice for a variety of power electronic systems. The device uses advanced Trench technology to provide low on-resistance and high switching speed, thereby improving overall system efficiency.
The AP9960J-VB is a single N-channel MOSFET in a TO251 package, designed for high-efficiency applications. It has excellent on-resistance and high current handling capability, making it an ideal choice for a variety of power electronic systems. The device uses advanced Trench technology to provide low on-resistance and high switching speed, thereby improving overall system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 1.8V | 55A | 14(mΩ) | 13(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 1.8V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 1.8V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
AP9960J-VB Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS = 4.5V
- 13mΩ @ VGS = 10V
- **Drain current (ID)**: 55A
- **Technology**: Trench
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS = 4.5V
- 13mΩ @ VGS = 10V
- **Drain current (ID)**: 55A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**:
The high current handling capability and low on-resistance of the AP9960J-VB make it ideal for use in power management modules for EVs and HEVs. For example, it can be used in on-board chargers and battery management systems to improve charging efficiency and reduce energy loss.
2. **Switching Power Supplies (SMPS) and DC-DC Converters**:
The low RDS(ON) and high switching speed of the device make it excel in switching power supplies and DC-DC converters. These modules are widely used in computers, communication equipment, and industrial automation systems. The AP9960J-VB can effectively reduce switching losses and improve overall system efficiency.
3. **Solar Inverter**:
In solar power generation systems, the inverter is a key component, and the high efficiency and reliability of the AP9960J-VB make it an ideal choice in the inverter. It can help achieve higher power conversion efficiency and ensure stable operation of the system.
4. **Motor drive**:
For motor control applications that require high current drive, such as industrial robots and home appliances, the AP9960J-VB provides a low-loss and high-efficiency solution. Its excellent performance characteristics can improve the response speed and efficiency of the motor drive system.
Through these application examples, it can be seen that the AP9960J-VB MOSFET has a wide range of application prospects in various high-efficiency and high-reliability power electronic systems, which can significantly improve system performance and energy efficiency.
1. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**:
The high current handling capability and low on-resistance of the AP9960J-VB make it ideal for use in power management modules for EVs and HEVs. For example, it can be used in on-board chargers and battery management systems to improve charging efficiency and reduce energy loss.
2. **Switching Power Supplies (SMPS) and DC-DC Converters**:
The low RDS(ON) and high switching speed of the device make it excel in switching power supplies and DC-DC converters. These modules are widely used in computers, communication equipment, and industrial automation systems. The AP9960J-VB can effectively reduce switching losses and improve overall system efficiency.
3. **Solar Inverter**:
In solar power generation systems, the inverter is a key component, and the high efficiency and reliability of the AP9960J-VB make it an ideal choice in the inverter. It can help achieve higher power conversion efficiency and ensure stable operation of the system.
4. **Motor drive**:
For motor control applications that require high current drive, such as industrial robots and home appliances, the AP9960J-VB provides a low-loss and high-efficiency solution. Its excellent performance characteristics can improve the response speed and efficiency of the motor drive system.
Through these application examples, it can be seen that the AP9960J-VB MOSFET has a wide range of application prospects in various high-efficiency and high-reliability power electronic systems, which can significantly improve system performance and energy efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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