AP9922EO-HF-VB Product details
Product introduction:
AP9922EO-HF-VB is a TSSOP8 packaged power MOSFET with common source dual N-channel configuration, suitable for power management and switching applications requiring high efficiency and high performance. Designed with advanced Trench technology, it can provide low on-resistance and high current carrying capacity.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | 18(mΩ) | 14(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
- **Package type**: TSSOP8
- **Configuration**: Common source dual N-channel (N+N-Channel)
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS = 2.5V
- 14mΩ @ VGS = 4.5V
- **Drain current (ID)**: 7.6A
- **Technology**: Trench
Domain and module applications:
1. **Laptops and tablets**
- **Application scenarios**: In the power management unit of laptops and tablets, AP9922EO-HF-VB can be used as a key component of the DC-DC converter to achieve high-efficiency power conversion.
- **Advantages**: Its low on-resistance and high current carrying capacity help reduce energy loss, extend battery life, and improve device performance and user experience.
2. **Smartphones**
- **Application scenarios**: In smartphones, the device can be used in the power management unit to achieve fast charging and efficient battery management.
- **Advantages**: Through optimized Trench technology, the device can provide stable and reliable power output while reducing heat generation, improving the life and performance of the phone.
3. **Industrial control and automation**
- **Application scenarios**: In industrial control systems and automation equipment, AP9922EO-HF-VB can be used as motor drive and high-power switch to ensure stable operation of the equipment.
- **Advantages**: Its high drain current and low on-resistance make it suitable for working under high load and frequent switching operations, improving the efficiency and reliability of the equipment.
4. **Wireless communication equipment**
- **Application scenarios**: In base stations and communication equipment, this MOSFET can be used in power amplifiers and signal conditioning circuits.
- **Advantages**: Due to its high-performance characteristics, AP9922EO-HF-VB can ensure stable operation of equipment under different environmental conditions, support long-term continuous operation and fast response requirements.
The versatility and high performance of AP9922EO-HF-VB make it an ideal choice for power management and control widely used in electronic devices, providing stable and reliable power solutions for various applications.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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