AP73T03GH-VB Product details
Product introduction:
AP73T03GH-VB is a single N-channel MOSFET with Trench technology and high-efficiency power conversion capability. The device is suitable for a variety of medium and high power electronic applications.
- **Packaging Type: ** TO252
- **Configuration: ** Single N-channel
- **Maximum Drain-Source Voltage (VDS): ** 30V
- **Maximum Gate-Source Voltage (VGS): ** ±20V
- **Threshold Voltage (Vth): ** 1.7V
- **On-Resistance (RDS(ON)): **
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Drain Current (ID): ** 80A
- **Technology: ** Trench
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 6(mΩ) | 5(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
1. **Packaging and configuration: **
- **TO252 package: ** Suitable for surface mounting, with good thermal management characteristics and moderate power handling capabilities.
2. **Electrical characteristics: **
- **Low on-resistance: **
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **High current carrying capacity: ** Maximum drain current is 80A, suitable for handling high current loads and high power applications.
- **Wide operating voltage range: ** Supports a maximum drain-source voltage of 30V, suitable for a variety of electronic devices and circuit designs in a medium voltage range.
3. **Technical advantages: **
- **Trench technology: ** Using advanced Trench structure design, it improves the conduction performance and thermal stability, suitable for high power, high frequency switching and energy conversion applications.
Domain and module applications:
AP73T03GH-VB MOSFET can be widely used in the following fields and modules:
- **Power Management and Converters:** The device is ideal for power switching in DC-DC converters, regulators, and power adapters. These applications require efficient power conversion and low-loss operation, and the low on-resistance and high current carrying capability of the AP73T03GH-VB can meet these requirements.
- **Power Tools and Electric Vehicles:** In motor controllers, the AP73T03GH-VB can handle high-current switching and power control, ensuring efficient operation of power tools and electric vehicles.
- **Power Inverters:** The MOSFET acts as a key component in solar inverters and grid inverters, effectively converting solar power into AC power, improving the efficiency and stability of the overall system.
- **Industrial Automation:** In industrial control systems, the AP73T03GH-VB is used to drive electric actuators, sensor interfaces, and logic control units, providing reliable power control and efficient current switching functions.
These application examples demonstrate the potential of the AP73T03GH-VB in multiple medium- and high-power, high-efficiency electronic designs, showing its importance and wide applicability in the field of modern power electronics.
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