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AP62T03GH-VB Product details
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Product introduction details:
AP62T03GH-VB is a single N-channel MOSFET using Trench technology. Its main technical parameters are as follows:
- **Packaging type: ** TO252
- **Configuration: ** Single N-channel
- **Maximum drain-source voltage (VDS): ** 30V
- **Maximum gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 1.7V
- **On-resistance (RDS(ON)): **
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Drain current (ID): ** 80A
AP62T03GH-VB is a single N-channel MOSFET using Trench technology. Its main technical parameters are as follows:
- **Packaging type: ** TO252
- **Configuration: ** Single N-channel
- **Maximum drain-source voltage (VDS): ** 30V
- **Maximum gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 1.7V
- **On-resistance (RDS(ON)): **
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Drain current (ID): ** 80A
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 6(mΩ) | 5(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
1. **Package type and configuration:** TO252 package, suitable for medium power density and medium thermal resistance design, commonly used in surface mount applications.
2. **Electrical characteristics:**
- **Moderate voltage tolerance:** Maximum drain-source voltage (VDS) of 30V, suitable for medium voltage range applications.
- **Low on-resistance:** 6mΩ and 5mΩ at different gate-source voltages (4.5V and 10V), respectively, providing low power consumption and high efficiency operation.
- **High drain current:** Maximum drain current (ID) reaches 80A, suitable for handling high power loads.
3. **Technical advantages:**
- **Trench technology:** Enhanced conduction capability and thermal stability, suitable for high power, high frequency switching and high efficiency energy conversion requirements.
1. **Package type and configuration:** TO252 package, suitable for medium power density and medium thermal resistance design, commonly used in surface mount applications.
2. **Electrical characteristics:**
- **Moderate voltage tolerance:** Maximum drain-source voltage (VDS) of 30V, suitable for medium voltage range applications.
- **Low on-resistance:** 6mΩ and 5mΩ at different gate-source voltages (4.5V and 10V), respectively, providing low power consumption and high efficiency operation.
- **High drain current:** Maximum drain current (ID) reaches 80A, suitable for handling high power loads.
3. **Technical advantages:**
- **Trench technology:** Enhanced conduction capability and thermal stability, suitable for high power, high frequency switching and high efficiency energy conversion requirements.
Domain and module applications：
Application Examples:
AP62T03GH-VB MOSFET is suitable for the following fields and modules:
- **Power Management and Converters:** In medium-power DC-DC converters, regulators and power adapters, high-efficiency power conversion and stable power output are achieved through its low on-resistance and high drain current.
- **Power Tools and Electric Vehicles:** As a switching element in motor controllers, it can handle high current and high power loads, providing reliable power tool and electric vehicle operation.
- **Industrial Control Systems:** In industrial automation, motor drives and high-power load control, it serves as a key power switching element to ensure system stability and efficient energy management.
- **Server and Data Center Equipment:** In server power management, high-performance computing and data storage systems, it is used for power switching and thermal management to provide efficient energy conversion and system reliability.
These examples demonstrate the potential of the AP62T03GH-VB in multiple medium-power, high-efficiency electronic designs, highlighting its importance and broad applicability in modern power electronics.
AP62T03GH-VB MOSFET is suitable for the following fields and modules:
- **Power Management and Converters:** In medium-power DC-DC converters, regulators and power adapters, high-efficiency power conversion and stable power output are achieved through its low on-resistance and high drain current.
- **Power Tools and Electric Vehicles:** As a switching element in motor controllers, it can handle high current and high power loads, providing reliable power tool and electric vehicle operation.
- **Industrial Control Systems:** In industrial automation, motor drives and high-power load control, it serves as a key power switching element to ensure system stability and efficient energy management.
- **Server and Data Center Equipment:** In server power management, high-performance computing and data storage systems, it is used for power switching and thermal management to provide efficient energy conversion and system reliability.
These examples demonstrate the potential of the AP62T03GH-VB in multiple medium-power, high-efficiency electronic designs, highlighting its importance and broad applicability in modern power electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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