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AP50T10GI-HF-VB Product details
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Product introduction details:
AP50T10GI-HF-VB is a high-performance single N-channel MOSFET using Trench technology. Its main technical parameters are as follows:
- **Packaging type: ** TO220F
- **Configuration: ** Single N-channel
- **Maximum drain-source voltage (VDS): ** 100V
- **Maximum gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 1.8V
- **On-resistance (RDS(ON)): ** 34mΩ @ VGS = 10V
- **Drain current (ID): ** 50A
AP50T10GI-HF-VB is a high-performance single N-channel MOSFET using Trench technology. Its main technical parameters are as follows:
- **Packaging type: ** TO220F
- **Configuration: ** Single N-channel
- **Maximum drain-source voltage (VDS): ** 100V
- **Maximum gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 1.8V
- **On-resistance (RDS(ON)): ** 34mΩ @ VGS = 10V
- **Drain current (ID): ** 50A
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | 34(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description:
1. **Package type and configuration:** TO220F package, suitable for high power density and low thermal resistance design, suitable for various high power application environments.
2. **Electrical characteristics:**
- **Wide voltage range:** Supports a maximum drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, suitable for applications requiring higher voltage tolerance.
- **Low on-resistance:** At a gate-source voltage of 10V, the on-resistance is 34mΩ, ensuring low power consumption and high efficiency operation.
- **High drain current:** The maximum drain current (ID) reaches 50A, suitable for handling high power loads.
3. **Technical advantages:**
- **Trench technology:** Enhanced conduction capability and thermal stability, suitable for high power, high frequency switching and high efficiency energy conversion requirements.
1. **Package type and configuration:** TO220F package, suitable for high power density and low thermal resistance design, suitable for various high power application environments.
2. **Electrical characteristics:**
- **Wide voltage range:** Supports a maximum drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, suitable for applications requiring higher voltage tolerance.
- **Low on-resistance:** At a gate-source voltage of 10V, the on-resistance is 34mΩ, ensuring low power consumption and high efficiency operation.
- **High drain current:** The maximum drain current (ID) reaches 50A, suitable for handling high power loads.
3. **Technical advantages:**
- **Trench technology:** Enhanced conduction capability and thermal stability, suitable for high power, high frequency switching and high efficiency energy conversion requirements.
Domain and module applications：
Application Examples:
AP50T10GI-HF-VB MOSFET is suitable for the following fields and modules:
- **Power Management and Converters:** In high voltage DC-DC converters, regulators and power adapters, high-efficiency power conversion and stable power output are achieved through its high voltage tolerance and low on-resistance.
- **Power Tools and Electric Vehicles:** As a switching element in motor controllers, it can handle high current and high power loads, providing reliable power tool and electric vehicle operation.
- **Industrial Automation:** In industrial control systems such as motor drives, power switches and high power load control, ensuring system stability and efficient energy management.
- **Solar Inverters:** In solar cell systems, it is used as a power switch in inverters and charge controllers to provide reliable energy conversion and power management functions.
These examples demonstrate the potential of AP50T10GI-HF-VB in multiple high-power, high-efficiency electronic designs, highlighting its importance and wide applicability in the field of modern power electronics.
AP50T10GI-HF-VB MOSFET is suitable for the following fields and modules:
- **Power Management and Converters:** In high voltage DC-DC converters, regulators and power adapters, high-efficiency power conversion and stable power output are achieved through its high voltage tolerance and low on-resistance.
- **Power Tools and Electric Vehicles:** As a switching element in motor controllers, it can handle high current and high power loads, providing reliable power tool and electric vehicle operation.
- **Industrial Automation:** In industrial control systems such as motor drives, power switches and high power load control, ensuring system stability and efficient energy management.
- **Solar Inverters:** In solar cell systems, it is used as a power switch in inverters and charge controllers to provide reliable energy conversion and power management functions.
These examples demonstrate the potential of AP50T10GI-HF-VB in multiple high-power, high-efficiency electronic designs, highlighting its importance and wide applicability in the field of modern power electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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