AP4578GH-HF-VB Product details
Product introduction:
AP4578GH-HF-VB is a high-performance MOSFET that adopts Trench technology and has a common source and common row N+P channel configuration. Its main technical parameters are as follows:
- **Packaging type: ** TO252-4L
- **Configuration: ** N+P channel with common source and common row
- **Maximum drain-source voltage (VDS): ** ±60V
- **Maximum gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 1.8V (N channel) / -1.7V (P channel)
- **On-resistance (RDS(ON)): **
- N channel: 33mΩ @ VGS = 4.5V, 30mΩ @ VGS = 10V
- P channel: 60mΩ @ VGS = 4.5V, 50mΩ @ VGS = 10V
- **Drain current (ID): ** 35A (N channel), -19A (P channel, note that it is a negative value)
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±60V | 1.8/-1.7V | 35/-19A | 33/60(mΩ) | 30/50(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±60V | 1.8/-1.7V | 35/-19A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±60V | 1.8/-1.7V | 35/-19A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P |
1. **Package type and configuration:** TO252-4L package, common source and common row N+P channel configuration, suitable for power switching and power management applications, compact structure, easy PCB layout design.
2. **Electrical characteristics:**
- **Wide voltage range:** Supports VDS up to ±60V and VGS up to ±20V, suitable for applications requiring higher voltage tolerance.
- **Dual channel threshold voltage:** The N-channel threshold voltage is 1.8V and the P-channel threshold voltage is -1.7V, providing flexibility to adapt to different voltage polarities.
- **Low on-resistance:** The on-resistance of the N-channel at different VGS is 33mΩ (4.5V) and 30mΩ (10V), respectively, and the P-channel is 60mΩ (4.5V) and 50mΩ (10V), respectively, ensuring efficient power conversion and low power operation.
3. **Technical advantages:**
- **Trench technology:** Enhanced conduction capability and switching speed, suitable for high-frequency switching power supplies and high-efficiency energy conversion applications.
Domain and module applications:
AP4578GH-HF-VB MOSFET is suitable for the following fields and modules:
- **Power management:** In high-voltage DC-DC converters, regulators and power adapters, high-efficiency power conversion and stable power output are achieved through its high voltage tolerance and low on-resistance.
- **Power tools and industrial equipment:** As a switching element in the motor controller, it can handle high current and high power loads, providing reliable power tool and industrial equipment operation.
- **Electric vehicle charging pile:** Used in the power switching circuit in the electric vehicle charging pile, supporting the control requirements of high voltage and high current, ensuring a safe and efficient charging process.
- **UPS (uninterruptible power supply) system:** In the UPS system, it is used for power switches in battery inverters and AC-DC converters to ensure the system's rapid response to power failures and stable output.
These examples demonstrate the versatile use of the AP4578GH-HF-VB in different applications, showing its importance and versatility in high-power, high-efficiency and high-reliability electronic designs.
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