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AP4526GH-VB Product details
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Product Introduction
AP4526GH-VB is a dual N+P-Channel MOSFET in TO252-4L package. It has a common source configuration and is suitable for circuit designs that require simultaneous control of positive and negative voltages. The device uses trench technology and has excellent conduction characteristics and low on-resistance, making it suitable for high-efficiency energy conversion and power management applications.
AP4526GH-VB is a dual N+P-Channel MOSFET in TO252-4L package. It has a common source configuration and is suitable for circuit designs that require simultaneous control of positive and negative voltages. The device uses trench technology and has excellent conduction characteristics and low on-resistance, making it suitable for high-efficiency energy conversion and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | 14/14(mΩ) | 16/16(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P |
Detailed parameter description
- **Model**: AP4526GH-VB
- **Package**: TO252-4L
- **Configuration**: Common source dual N+P channel
- **Drain-source voltage (VDS)**: ±40V
- **Gate-source voltage (VGS)**: 20V (±V)
- **Threshold voltage (Vth)**: 1.8V (N channel), -1.7V (P channel)
- **On-resistance (RDS(ON))**:
- N channel:
- 14mΩ @ VGS=4.5V
- 16mΩ @ VGS=10V
- P channel:
- 14mΩ @ VGS=-4.5V
- 16mΩ @ VGS=-10V
- **Maximum drain current (ID)**: ±50A
- **Technology**: Trench technology
- **Model**: AP4526GH-VB
- **Package**: TO252-4L
- **Configuration**: Common source dual N+P channel
- **Drain-source voltage (VDS)**: ±40V
- **Gate-source voltage (VGS)**: 20V (±V)
- **Threshold voltage (Vth)**: 1.8V (N channel), -1.7V (P channel)
- **On-resistance (RDS(ON))**:
- N channel:
- 14mΩ @ VGS=4.5V
- 16mΩ @ VGS=10V
- P channel:
- 14mΩ @ VGS=-4.5V
- 16mΩ @ VGS=-10V
- **Maximum drain current (ID)**: ±50A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
AP4526GH-VB is suitable for a variety of applications that require positive and negative voltage control and high current drive. The following are several specific application examples:
1. **Power switches and inverters**:
AP4526GH-VB can be used as a key switching device in power switches and inverters, especially for applications that require efficient energy conversion and current control, such as power tools, home appliance inverters, etc.
2. **Electric vehicles and hybrid vehicles**:
In the electric powertrain of electric and hybrid vehicles, AP4526GH-VB is used as a key component of motor drivers and battery management systems. Its high voltage tolerance and low on-resistance ensure efficient energy conversion and high reliability of the system.
3. **Industrial automation equipment**:
In industrial automation equipment and robot control systems, AP4526GH-VB is used for high power switching and precise electric actuator control. Its common source configuration enables it to effectively manage positive and negative voltage requirements in complex circuits.
4. **Communication equipment**:
In communication base stations and network equipment, AP4526GH-VB is used as a power semiconductor switching device for high-frequency switching and power management. Its stable performance and high power handling capability support the stable operation of communication equipment under various working conditions.
With its dual N+P channel structure and excellent electrical performance characteristics, AP4526GH-VB is suitable for various electronic devices and systems that require positive and negative voltage control and high-power drive, bringing greater flexibility and reliability to circuit design.
AP4526GH-VB is suitable for a variety of applications that require positive and negative voltage control and high current drive. The following are several specific application examples:
1. **Power switches and inverters**:
AP4526GH-VB can be used as a key switching device in power switches and inverters, especially for applications that require efficient energy conversion and current control, such as power tools, home appliance inverters, etc.
2. **Electric vehicles and hybrid vehicles**:
In the electric powertrain of electric and hybrid vehicles, AP4526GH-VB is used as a key component of motor drivers and battery management systems. Its high voltage tolerance and low on-resistance ensure efficient energy conversion and high reliability of the system.
3. **Industrial automation equipment**:
In industrial automation equipment and robot control systems, AP4526GH-VB is used for high power switching and precise electric actuator control. Its common source configuration enables it to effectively manage positive and negative voltage requirements in complex circuits.
4. **Communication equipment**:
In communication base stations and network equipment, AP4526GH-VB is used as a power semiconductor switching device for high-frequency switching and power management. Its stable performance and high power handling capability support the stable operation of communication equipment under various working conditions.
With its dual N+P channel structure and excellent electrical performance characteristics, AP4526GH-VB is suitable for various electronic devices and systems that require positive and negative voltage control and high-power drive, bringing greater flexibility and reliability to circuit design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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