AP2626GY-HF-VB Product details
Product introduction:
AP2626GY-HF-VB is a dual N-channel MOSFET in SOT23-6 package. The device adopts advanced trench technology, providing low on-resistance and efficient switching performance, suitable for various low-voltage application scenarios. Its design enables it to achieve excellent on-resistance at gate drive voltages of 2.5V and 4.5V, thereby improving system efficiency and performance. With a drain-source voltage of 20V and a gate-source voltage of 12V, this product is suitable for applications that require fast switching and high current handling capabilities.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28(mΩ) | 22(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
- **Model**: AP2626GY-HF-VB
- **Package**: SOT23-6
- **Configuration**: Dual N+N channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: 12 (±V)
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Drain current (ID)**: 6A
- **Technology**: Trench technology
Domain and module applications:
AP2626GY-HF-VB, as a high-performance dual N-channel MOSFET, is widely used in the following fields and modules:
1. **Power management module**:
- **Buck converter**: In the DC-DC buck converter, this MOSFET can provide efficient switching characteristics, reduce power loss and improve conversion efficiency.
- **Boost converter**: In the boost circuit that requires efficient energy conversion, this device can achieve fast and efficient energy transmission through low on-resistance.
2. **Motor drive control**:
- **Small DC motor control**: In the small motor drive circuit, AP2626GY-HF-VB can provide fast switching capability and high current handling capability, making motor control more precise and efficient.
3. **Consumer Electronics**:
- **Smartphones and Portable Devices**: Due to its small package and high performance, the AP2626GY-HF-VB is ideal for power management and load switching applications in smartphones and tablets.
- **Wearable Devices**: In smart watches and other wearable devices, this MOSFET can be used for battery management and low-power applications.
4. **Communication Equipment**:
- **WiFi Modules and Bluetooth Devices**: In wireless communication modules that require efficient energy transmission and low power consumption, this MOSFET can provide excellent performance support.
- **Base Stations and Routers**: In the power management system of communication base stations and routers, the AP2626GY-HF-VB can improve the reliability and efficiency of the overall system.
Through these application examples, it can be seen that the AP2626GY-HF-VB has a wide range of application prospects in various low-voltage and high-performance applications with its high performance and versatility.
Technical support:
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