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AP13P15GJ-HF-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
AP13P15GJ-HF-VB is a single P-channel power field effect transistor (Power MOSFET) manufactured using the Trench process. The device is suitable for load switching and power management applications, with a drain-source voltage (VDS) rating of up to -200V and a maximum drain current (ID) capacity of -5A.
AP13P15GJ-HF-VB is a single P-channel power field effect transistor (Power MOSFET) manufactured using the Trench process. The device is suitable for load switching and power management applications, with a drain-source voltage (VDS) rating of up to -200V and a maximum drain current (ID) capacity of -5A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -200V | -2.5V | -5A | 1200(mΩ) | 1000(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -200V | -2.5V | -5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -200V | -2.5V | -5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
2. Parameter description
- **Model**: AP13P15GJ-HF-VB
- **Package**: TO251
- **Channel type**: Single P-channel
- **VDS (Drain-Source Voltage)**: -200V
- **VGS (Gate-Source Voltage)**: ±20V
- **Vth (Threshold Voltage)**: -2.5V
- **RDS(ON) (On-Resistance)**:
- 1200mΩ @ VGS = 4.5V
- 1000mΩ @ VGS = 10V
- **ID (Drain Current)**: -5A
- **Technology**: Trench
- **Model**: AP13P15GJ-HF-VB
- **Package**: TO251
- **Channel type**: Single P-channel
- **VDS (Drain-Source Voltage)**: -200V
- **VGS (Gate-Source Voltage)**: ±20V
- **Vth (Threshold Voltage)**: -2.5V
- **RDS(ON) (On-Resistance)**:
- 1200mΩ @ VGS = 4.5V
- 1000mΩ @ VGS = 10V
- **ID (Drain Current)**: -5A
- **Technology**: Trench
Domain and module applications：
3. Application Examples
AP13P15GJ-HF-VB can be applied to the following fields and modules:
- **Power Management**: Due to its high drain-source voltage and drain current capability, it is suitable for use as a power switch, especially in load switches and power management systems.
- **Automotive Electronics**: In automotive electronic systems, it can be used for battery management, electric vehicle charging systems, and other applications that need to handle high voltages and currents.
- **Industrial Control**: Used in power switches and inverters in industrial control equipment to provide efficient power management and control.
- **Consumer Electronics**: For example, switching power supply circuits in power adapters, laptops, and other consumer electronic devices.
These examples show the flexible application of AP13P15GJ-HF-VB in multiple fields, and its high voltage and current capabilities make it an ideal choice for handling high power requirements.
AP13P15GJ-HF-VB can be applied to the following fields and modules:
- **Power Management**: Due to its high drain-source voltage and drain current capability, it is suitable for use as a power switch, especially in load switches and power management systems.
- **Automotive Electronics**: In automotive electronic systems, it can be used for battery management, electric vehicle charging systems, and other applications that need to handle high voltages and currents.
- **Industrial Control**: Used in power switches and inverters in industrial control equipment to provide efficient power management and control.
- **Consumer Electronics**: For example, switching power supply circuits in power adapters, laptops, and other consumer electronic devices.
These examples show the flexible application of AP13P15GJ-HF-VB in multiple fields, and its high voltage and current capabilities make it an ideal choice for handling high power requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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