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AM3998N-T1-PF-VB Product details
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AM3998N-T1-PF-VB Product Introduction
AM3998N-T1-PF-VB is a dual N+N channel MOSFET, using SOT23-6 packaging technology. The device is designed for various power management and switching circuit applications, with excellent conduction characteristics and high current carrying capacity, suitable for electronic systems requiring high efficiency and miniaturization design.
AM3998N-T1-PF-VB is a dual N+N channel MOSFET, using SOT23-6 packaging technology. The device is designed for various power management and switching circuit applications, with excellent conduction characteristics and high current carrying capacity, suitable for electronic systems requiring high efficiency and miniaturization design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28(mΩ) | 22(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
AM3998N-T1-PF-VB Detailed parameter description
- **Package**: SOT23-6
- **Configuration**: Dual N+N channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 6A
- **Technology**: Trench
- **Package**: SOT23-6
- **Configuration**: Dual N+N channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 6A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
Power Management and DC-DC Converters
AM3998N-T1-PF-VB can be used in a variety of power management applications, including DC-DC converters and regulators. Its low on-resistance and high current capability enable it to effectively manage power conversion, improve system efficiency and reduce energy loss.
Battery Charge and Discharge Management
In mobile devices and portable electronics, this MOSFET can be used in battery management systems to ensure the safety and efficiency of battery charging and discharging. Its fast response and low voltage drop characteristics help extend battery life and optimize device performance.
Carrier Communication Equipment
In wireless communication equipment, AM3998N-T1-PF-VB can be used as a power amplifier and RF switch to improve signal transmission efficiency and system reliability. Its excellent high-frequency characteristics and small package make it suitable for communication equipment that requires high-frequency stability and compact design.
Automotive Electronics
As a key component of automotive electronic systems, this MOSFET can be used in drive motor control, vehicle power management, and various vehicle electronic modules. Its high current carrying capacity and stable performance make it suitable for harsh automotive environments and long-term stable operation requirements.
Through the above application examples, AM3998N-T1-PF-VB demonstrates its wide application and excellent performance in multiple fields, providing electronic designers with flexible and reliable solutions.
Power Management and DC-DC Converters
AM3998N-T1-PF-VB can be used in a variety of power management applications, including DC-DC converters and regulators. Its low on-resistance and high current capability enable it to effectively manage power conversion, improve system efficiency and reduce energy loss.
Battery Charge and Discharge Management
In mobile devices and portable electronics, this MOSFET can be used in battery management systems to ensure the safety and efficiency of battery charging and discharging. Its fast response and low voltage drop characteristics help extend battery life and optimize device performance.
Carrier Communication Equipment
In wireless communication equipment, AM3998N-T1-PF-VB can be used as a power amplifier and RF switch to improve signal transmission efficiency and system reliability. Its excellent high-frequency characteristics and small package make it suitable for communication equipment that requires high-frequency stability and compact design.
Automotive Electronics
As a key component of automotive electronic systems, this MOSFET can be used in drive motor control, vehicle power management, and various vehicle electronic modules. Its high current carrying capacity and stable performance make it suitable for harsh automotive environments and long-term stable operation requirements.
Through the above application examples, AM3998N-T1-PF-VB demonstrates its wide application and excellent performance in multiple fields, providing electronic designers with flexible and reliable solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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