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AM2362N-VB Product details
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AM2362N-VB MOSFET Product Introduction
The AM2362N-VB is a single N-Channel MOSFET in a SOT23-3 package. It supports a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, with a threshold voltage (Vth) of 1.7V. Using Trench technology, the on-resistance (RDS(ON)) of this MOSFET at 4.5V and 10V gate-source voltage is 33mΩ and 30mΩ respectively.
With a maximum drain current (ID) of 5.5A, it is suitable for low-power and medium-power applications.
The AM2362N-VB is a single N-Channel MOSFET in a SOT23-3 package. It supports a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, with a threshold voltage (Vth) of 1.7V. Using Trench technology, the on-resistance (RDS(ON)) of this MOSFET at 4.5V and 10V gate-source voltage is 33mΩ and 30mΩ respectively.
With a maximum drain current (ID) of 5.5A, it is suitable for low-power and medium-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 5.5A | 33(mΩ) | 30(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 5.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 5.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
AM2362N-VB MOSFET Detailed parameter description
- **Model**: AM2362N-VB
- **Package**: SOT23-3
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 33mΩ @ VGS = 4.5V
- 30mΩ @ VGS = 10V
- **Drain current (ID)**: 5.5A
- **Technology**: Trench
- **Model**: AM2362N-VB
- **Package**: SOT23-3
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 33mΩ @ VGS = 4.5V
- 30mΩ @ VGS = 10V
- **Drain current (ID)**: 5.5A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Power management**:
AM2362N-VB can be used as a switching element in low-voltage power management, such as power switches, regulators, and power switches in DC-DC converters, providing efficient power conversion and power management.
2. **Portable devices**:
Due to its small package and low power consumption, it is suitable for battery management circuits in portable devices such as smartphones and tablets, extending battery life and improving device efficiency.
3. **Consumer electronics**:
In consumer electronics, such as TVs, audio systems, etc., power management and circuit protection ensure stable operation and safety of the equipment.
4. **Automotive electronics**:
In automotive electronic systems, such as power switches and circuit protection functions in modules such as on-board chargers and power window controllers, provide reliable power management and protection.
5. **Industrial Control**:
Suitable for power switches and circuit protection in industrial automation control systems, ensuring the stability and reliability of equipment, suitable for application requirements in various industrial environments.
The design characteristics of AM2362N-VB MOSFET make it have a wide range of application potential in low to medium power applications, especially suitable for electronic products and systems that require small packaging, low on-resistance and high efficiency conversion.
1. **Power management**:
AM2362N-VB can be used as a switching element in low-voltage power management, such as power switches, regulators, and power switches in DC-DC converters, providing efficient power conversion and power management.
2. **Portable devices**:
Due to its small package and low power consumption, it is suitable for battery management circuits in portable devices such as smartphones and tablets, extending battery life and improving device efficiency.
3. **Consumer electronics**:
In consumer electronics, such as TVs, audio systems, etc., power management and circuit protection ensure stable operation and safety of the equipment.
4. **Automotive electronics**:
In automotive electronic systems, such as power switches and circuit protection functions in modules such as on-board chargers and power window controllers, provide reliable power management and protection.
5. **Industrial Control**:
Suitable for power switches and circuit protection in industrial automation control systems, ensuring the stability and reliability of equipment, suitable for application requirements in various industrial environments.
The design characteristics of AM2362N-VB MOSFET make it have a wide range of application potential in low to medium power applications, especially suitable for electronic products and systems that require small packaging, low on-resistance and high efficiency conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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