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AFP6801TS6RG-VB Product details
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Product Introduction Details
**AFP6801TS6RG-VB MOSFET**
AFP6801TS6RG-VB is a dual P-channel MOSFET in SOT23-6 package. It is suitable for negative drain-source voltage applications and has excellent conduction characteristics and reliability, suitable for providing high efficiency and stable performance in various electronic systems.
**AFP6801TS6RG-VB MOSFET**
AFP6801TS6RG-VB is a dual P-channel MOSFET in SOT23-6 package. It is suitable for negative drain-source voltage applications and has excellent conduction characteristics and reliability, suitable for providing high efficiency and stable performance in various electronic systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100(mΩ) | 75(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
Detailed parameter description
- **Package type**: SOT23-6
- **Transistor configuration**: Dual P-channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS=2.5V
- 75mΩ @ VGS=4.5V
- **Drain current (ID)**: -4A
- **Technology type**: Trench
- **Package type**: SOT23-6
- **Transistor configuration**: Dual P-channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS=2.5V
- 75mΩ @ VGS=4.5V
- **Drain current (ID)**: -4A
- **Technology type**: Trench
Domain and module applications：
Applications and module examples
**Power management**:
AFP6801TS6RG-VB is suitable for power management circuits with negative drain-source voltage, especially in battery-powered devices and portable electronic products, where it can be used for power switching and current control.
**Circuit protection**:
In various circuit protection applications, such as overcurrent protection and overvoltage protection circuits, AFP6801TS6RG-VB can effectively protect electronic devices from damage.
**Sensor interface**:
In sensor interface circuits, the fast switching characteristics and stable performance of AFP6801TS6RG-VB make it an ideal choice for sensor signal processing and driving circuits.
**Portable consumer electronics**:
Due to its small package and low power consumption, AFP6801TS6RG-VB is suitable for power management and circuit control in portable consumer electronics such as smartphones, tablets and portable audio devices.
In summary, as a dual P-channel MOSFET, AFP6801TS6RG-VB has wide application potential in negative drain-source voltage applications, and is particularly suitable for electronic system design in multiple fields such as power management, circuit protection, sensor interface and portable consumer electronics.
**Power management**:
AFP6801TS6RG-VB is suitable for power management circuits with negative drain-source voltage, especially in battery-powered devices and portable electronic products, where it can be used for power switching and current control.
**Circuit protection**:
In various circuit protection applications, such as overcurrent protection and overvoltage protection circuits, AFP6801TS6RG-VB can effectively protect electronic devices from damage.
**Sensor interface**:
In sensor interface circuits, the fast switching characteristics and stable performance of AFP6801TS6RG-VB make it an ideal choice for sensor signal processing and driving circuits.
**Portable consumer electronics**:
Due to its small package and low power consumption, AFP6801TS6RG-VB is suitable for power management and circuit control in portable consumer electronics such as smartphones, tablets and portable audio devices.
In summary, as a dual P-channel MOSFET, AFP6801TS6RG-VB has wide application potential in negative drain-source voltage applications, and is particularly suitable for electronic system design in multiple fields such as power management, circuit protection, sensor interface and portable consumer electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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