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AFP3993TS6RG-VB Product details
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Product Introduction Details
**AFP3993TS6RG-VB MOSFET**
AFP3993TS6RG-VB is a dual P-channel MOSFET in SOT23-6 package. It has negative drain-source voltage and excellent conduction characteristics, suitable for electronic system design requiring high efficiency and high performance.
**AFP3993TS6RG-VB MOSFET**
AFP3993TS6RG-VB is a dual P-channel MOSFET in SOT23-6 package. It has negative drain-source voltage and excellent conduction characteristics, suitable for electronic system design requiring high efficiency and high performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100(mΩ) | 75(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
Detailed parameter description
- **Package type**: SOT23-6
- **Transistor configuration**: Dual P-channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS=2.5V
- 75mΩ @ VGS=4.5V
- **Drain current (ID)**: -4A
- **Technology type**: Trench
- **Package type**: SOT23-6
- **Transistor configuration**: Dual P-channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS=2.5V
- 75mΩ @ VGS=4.5V
- **Drain current (ID)**: -4A
- **Technology type**: Trench
Domain and module applications：
Application areas and module examples
**Power management**:
AFP3993TS6RG-VB is suitable for power management circuits with negative drain-source voltage, such as battery management systems and power switches for portable electronic devices. Its excellent conduction characteristics and small package make it outstanding in space-constrained and power-sensitive applications.
**Circuit protection**:
In various electronic devices, AFP3993TS6RG-VB can be used for circuit protection, especially in application scenarios where circuits with negative drain-source voltage need to be protected from overcurrent and overvoltage.
**Sensor interface**:
In sensor interface circuits, the fast switching characteristics of AFP3993TS6RG-VB can ensure accurate capture and processing of sensor signals, and is suitable for various sensor driving and signal conditioning applications.
**Portable medical devices**:
Due to its small package and low power consumption, the AFP3993TS6RG-VB is very suitable for power management and circuit protection of portable medical devices, ensuring stable operation and high performance of the equipment in medical environments.
In summary, as a dual P-channel MOSFET, the AFP3993TS6RG-VB has broad application prospects in power management, circuit protection, sensor interface, portable medical devices and other fields due to its negative drain-source voltage and excellent electrical characteristics.
**Power management**:
AFP3993TS6RG-VB is suitable for power management circuits with negative drain-source voltage, such as battery management systems and power switches for portable electronic devices. Its excellent conduction characteristics and small package make it outstanding in space-constrained and power-sensitive applications.
**Circuit protection**:
In various electronic devices, AFP3993TS6RG-VB can be used for circuit protection, especially in application scenarios where circuits with negative drain-source voltage need to be protected from overcurrent and overvoltage.
**Sensor interface**:
In sensor interface circuits, the fast switching characteristics of AFP3993TS6RG-VB can ensure accurate capture and processing of sensor signals, and is suitable for various sensor driving and signal conditioning applications.
**Portable medical devices**:
Due to its small package and low power consumption, the AFP3993TS6RG-VB is very suitable for power management and circuit protection of portable medical devices, ensuring stable operation and high performance of the equipment in medical environments.
In summary, as a dual P-channel MOSFET, the AFP3993TS6RG-VB has broad application prospects in power management, circuit protection, sensor interface, portable medical devices and other fields due to its negative drain-source voltage and excellent electrical characteristics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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